Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
张恩霞, 钱聪, 张正选, 林成鲁, 王曦, 王英民, 王晓荷, 赵桂茹, 恩云飞, 罗宏伟, 师谦
Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
Zhang En-Xia (张恩霞), Qian Cong (钱聪), Zhang Zheng-Xuan (张正选), Lin Cheng-Lu (林成鲁), Wang Xi (王曦), Wang Ying-Min (王英民), Wang Xiao-He(王晓荷), Zhao Gui-Ru (赵桂茹), En Yun-Fei (恩云飞), Luo Hong-Wei (罗宏伟), Shi Qian (师谦)
中国物理B
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2006, (4): 792
-797
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DOI: 10.1088/1009-1963/15/4/020