中国物理B ›› 2006, Vol. 15 ›› Issue (4): 792-797.doi: 10.1088/1009-1963/15/4/020

• • 上一篇    下一篇

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

王英民1, 王晓荷1, 赵桂茹1, 恩云飞2, 罗宏伟2, 师谦2, 钱聪3, 张正选3, 林成鲁3, 王曦3, 张恩霞4   

  1. (1)771st Research Institute of China Electronics Technology Group Corporation, Xi'an 710054, China; (2)China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China; (3)State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,CAS, Shanghai 200050, China; (4)State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,CAS, Shanghai 200050, China;China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, Ch
  • 收稿日期:2005-06-20 修回日期:2005-10-18 出版日期:2006-04-20 发布日期:2006-04-20
  • 基金资助:
    Project supported by the National Fund for Distinguished Young Scholars (Grant No 59925205), the Basic Research Program of Shanghai (Grant No 02DJ14069), and the National Natural Science Foundation of China (Grant No 10305018).

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

Zhang En-Xia (张恩霞)ac, Qian Cong (钱聪)a, Zhang Zheng-Xuan (张正选)a, Lin Cheng-Lu (林成鲁)a, Wang Xi (王曦)a, Wang Ying-Min (王英民)b, Wang Xiao-He(王晓荷)b, Zhao Gui-Ru (赵桂茹)b, En Yun-Fei (恩云飞)c, Luo Hong-Wei (罗宏伟)c, Shi Qian (师谦)c   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China; b 771st Research Institute of China Electronics Technology Group Corporation, Xi'an 710054, China; c China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
  • Received:2005-06-20 Revised:2005-10-18 Online:2006-04-20 Published:2006-04-20
  • Supported by:
    Project supported by the National Fund for Distinguished Young Scholars (Grant No 59925205), the Basic Research Program of Shanghai (Grant No 02DJ14069), and the National Natural Science Foundation of China (Grant No 10305018).

PDF (PC)

689

赞

摘要： The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO2. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.

关键词: separation-by-implanted-oxygen, silicon-on-insulator, total-dose irradiation effect, ion \\hbox{\hskip 1.9cm} implantation

Abstract: The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO2). The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.

Key words: separation-by-implanted-oxygen, silicon-on-insulator, total-dose irradiation effect, ion implantation

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
61.80.Jh (Ion radiation effects) 61.82.Ms (Insulators) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 81.65.Lp (Surface hardening: nitridation, carburization, carbonitridation ?) 85.30.Tv (Field effect devices)