中国物理B ›› 2005, Vol. 14 ›› Issue (8): 1639-1643.doi: 10.1088/1009-1963/14/8/031

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I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction

竺士炀, 茹国平, 周嘉, 黄宜平   

  1. Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2005-01-27 修回日期:2005-03-11 出版日期:2005-07-13 发布日期:2005-07-13
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No 60106001).

I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction

Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Zhou Jia (周嘉), Huang Yi-Ping (黄宜平)   

  1. Department of Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2005-01-27 Revised:2005-03-11 Online:2005-07-13 Published:2005-07-13
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No 60106001).

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摘要： The current--voltage (I--V) characteristics of Ni silicide/n-Si(100) contacts,which were formed from solid-state reaction of Ni--Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I--V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A double-Schottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I--V curves, from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.

关键词: Schottky barrier, metal-semiconductor contact, current-voltage characteristics

Abstract: The current--voltage (I--V) characteristics of Ni silicide/n-Si(100) contacts,which were formed from solid-state reaction of Ni--Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I--V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A double-Schottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I--V curves, from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.

Key words: Schottky barrier, metal-semiconductor contact, current-voltage characteristics

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
73.30.+y (Surface double layers, Schottky barriers, and work functions) 79.40.+z (Thermionic emission) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 68.60.Dv (Thermal stability; thermal effects)