Abstract: Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the $I$-$V$ characteristics. The interface oxide capacitance $C_{\rm i}$ is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor $n$, the series resistance $R_{\rm s}$, the zero-field barrier height $\phi_{\rm B0}$, the interface state density $D_{\rm it}$, the interface oxide capacitance $C_{\rm i}$ and the neutral level of interface states $\phi_0$.

Key words: silicon carbide, interface states, Schottky diodes, barrier height