Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

doi:10.1088/1674-1056/27/6/066106

中国物理B ›› 2018, Vol. 27 ›› Issue (6): 66106-066106.doi: 10.1088/1674-1056/27/6/066106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红)

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

收稿日期:2017-09-11 修回日期:2018-01-23 出版日期:2018-06-05 发布日期:2018-06-05
通讯作者: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红)

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Received:2017-09-11 Revised:2018-01-23 Online:2018-06-05 Published:2018-06-05
Contact: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

摘要/Abstract

摘要： Silicon p-i-n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.

关键词: semiconductor, junction diodes, transport properties

Abstract: Silicon p-i-n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.

Key words: semiconductor, junction diodes, transport properties

中图分类号: (Semiconductors)

61.82.Fk

85.30.Kk (Junction diodes) 91.60.Tn (Transport properties)

庞正鹏, 王欣, 陈健, 杨盼, 张洋, 田永辉, 杨建红. Non-monotonic dependence of current upon i-width in silicon p-i-n diodes[J]. 中国物理B, 2018, 27(6): 66106-066106.

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红). Non-monotonic dependence of current upon i-width in silicon p-i-n diodes[J]. Chin. Phys. B, 2018, 27(6): 66106-066106.

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Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

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