中国物理B ›› 2025, Vol. 34 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/adcb22

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Performance enhancement of IGZO thin-film transistors via ultra-thin HfO2 and the implementation of logic device functionality

Xuyang Li(栗旭阳)1,†, Bin Liu(刘斌)2, Xianwen Liu(刘贤文)2, Shuo Zhang(张硕)2, Congyang Wen(温丛阳)2, Jin Zhang(张进)1, Haifeng Liang(梁海锋)1, Guangcai Yuan(袁广才)3, Jianshe Xue(薛建设)3, and Zhinong Yu(喻志农)2,‡   

  1. 1 School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710021, China;
    2 School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China;
    3 Beijing BOE Display Technology Co., Ltd., Beijing 100176, China
  • 收稿日期:2025-02-28 修回日期:2025-03-25 接受日期:2025-04-10 出版日期:2025-06-18 发布日期:2025-06-30
  • 通讯作者: Xuyang Li, Zhinong Yu E-mail:lixuyang@xatu.edu.cn;znyu@bit.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 62441407), the Natural Science Basic Research Program of Shaanxi (Grant No. 2024JCYBQN- 0631), the Natural Science Foundation of Shaanxi Provincial Department of Education (Grant No. 23JK0482), and the Shaanxi Province Key R & D Program General Project - Industrial Field (Grant No. 2024GX-YBXM-085).

Performance enhancement of IGZO thin-film transistors via ultra-thin HfO2 and the implementation of logic device functionality

Xuyang Li(栗旭阳)1,†, Bin Liu(刘斌)2, Xianwen Liu(刘贤文)2, Shuo Zhang(张硕)2, Congyang Wen(温丛阳)2, Jin Zhang(张进)1, Haifeng Liang(梁海锋)1, Guangcai Yuan(袁广才)3, Jianshe Xue(薛建设)3, and Zhinong Yu(喻志农)2,‡   

  1. 1 School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710021, China;
    2 School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China;
    3 Beijing BOE Display Technology Co., Ltd., Beijing 100176, China
  • Received:2025-02-28 Revised:2025-03-25 Accepted:2025-04-10 Online:2025-06-18 Published:2025-06-30
  • Contact: Xuyang Li, Zhinong Yu E-mail:lixuyang@xatu.edu.cn;znyu@bit.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 62441407), the Natural Science Basic Research Program of Shaanxi (Grant No. 2024JCYBQN- 0631), the Natural Science Foundation of Shaanxi Provincial Department of Education (Grant No. 23JK0482), and the Shaanxi Province Key R & D Program General Project - Industrial Field (Grant No. 2024GX-YBXM-085).

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摘要： The enhancement of mobility has always been a research focus in the field of thin-film transistors (TFTs). In this paper, we report a method using ultra-thin HfO$_{2}$ to improve the electrical performance of indium gallium zinc oxide (IGZO) TFTs. HfO$_{2}$ not only repairs the surface morphology of the active layer, but also increases the carrier concentration. When the thickness of the HfO$_{2}$ film was 3 nm, the mobility of the device was doubled (14.9 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1} \to 29.6 $ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and the device exhibited excellent logic device performance. This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs, offering new ideas and experimental foundation for research into high-performance metal oxide (MO) TFTs.

关键词: thin-film transistors, metal oxide, indium gallium zinc oxide (IGZO), logic devices, TCAD simulation

Abstract: The enhancement of mobility has always been a research focus in the field of thin-film transistors (TFTs). In this paper, we report a method using ultra-thin HfO$_{2}$ to improve the electrical performance of indium gallium zinc oxide (IGZO) TFTs. HfO$_{2}$ not only repairs the surface morphology of the active layer, but also increases the carrier concentration. When the thickness of the HfO$_{2}$ film was 3 nm, the mobility of the device was doubled (14.9 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1} \to 29.6 $ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and the device exhibited excellent logic device performance. This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs, offering new ideas and experimental foundation for research into high-performance metal oxide (MO) TFTs.

Key words: thin-film transistors, metal oxide, indium gallium zinc oxide (IGZO), logic devices, TCAD simulation

中图分类号:  (Amorphous semiconductors, metals, and alloys)

  • 61.43.Dq
61.82.Fk (Semiconductors)