Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

doi:10.1088/1674-1056/ac05aa

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/ac05aa

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

Jianing Guo(郭佳宁), Dongli Zhang(张冬利)^†, Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

收稿日期:2021-04-01 修回日期:2021-05-18 接受日期:2021-05-27 出版日期:2021-10-13 发布日期:2021-11-03
通讯作者: Dongli Zhang E-mail:dongli_zhang@suda.edu.cn
基金资助:
Project supported in part by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province, China (Grant No. SBK2020021406), the Fund from the State Key Laboratory of ASIC and System, Fudan University (Grant No. 2019KF007), the Fund from the Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the Jiangsu Higher Education Institute of China (Grant No. 19KJB510058).

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

Jianing Guo(郭佳宁), Dongli Zhang(张冬利)^†, Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Received:2021-04-01 Revised:2021-05-18 Accepted:2021-05-27 Online:2021-10-13 Published:2021-11-03
Contact: Dongli Zhang E-mail:dongli_zhang@suda.edu.cn
Supported by:
Project supported in part by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province, China (Grant No. SBK2020021406), the Fund from the State Key Laboratory of ASIC and System, Fudan University (Grant No. 2019KF007), the Fund from the Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the Jiangsu Higher Education Institute of China (Grant No. 19KJB510058).

摘要/Abstract

摘要： A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ($V_{\mathrm{o}}^{+}$) in addition to the commonly reported doubly charged oxygen vacancies ($V_{\mathrm{o}}^{2+}$). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of $V_{\mathrm{o}}^{+}$ under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.

关键词: amorphous IGZO, thin-film transistors, negative bias stress, subthreshold swing

Abstract: A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ($V_{\mathrm{o}}^{+}$) in addition to the commonly reported doubly charged oxygen vacancies ($V_{\mathrm{o}}^{2+}$). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of $V_{\mathrm{o}}^{+}$ under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.

Key words: amorphous IGZO, thin-film transistors, negative bias stress, subthreshold swing

中图分类号: (Amorphous semiconductors)

81.05.Gc

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress[J]. 中国物理B, 2021, 30(11): 118102-118102.

参考文献

[1] Yamazaki S, Hirohashi T, Takahashi M, Adachi S, Tsubuku M, Koezuka J, Okazaki K, Kanzaki Y, Matsukizono H, Kaneko S, Mori S and Matsuo T 2014 Journal of the Society for Information Display 22 55
[2] Lu L and Wang M 2015 IEEE Trans. Electron Dev. 62 574
[3] Lu L, Li J, Feng Z, Kwok H and Wang M 2016 IEEE Electron Dev. Lett. 37 728
[4] Yang Y, Zhang D, Wang M, Lu L and Wong M 2018 IEEE Electron Dev. Lett. 39 707
[5] Chen T, Chang T C, Tsai C T, Hsieh T Y, Chen S C, Lin C S, Hung M C, Tu C H, Chang J J and Chen P L 2010 Appl. Phys. Lett. 97 112104
[6] Tang L, Yu G, Lu H, Wu C, Qian H, Zhou D, Zhang R, Zheng Y and Huang X 2015 Chin. Phys. B 24 088504
[7] Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[8] Li S, Wang M, Zhang D, Wang H and Shan Q 2019 IEEE J. Electron Dev. Soc. 7 1063
[9] Gosain D P and Tanaka T 2009 Jpn. J. Appl. Phys. 48 03
[10] Li J, Lu L, Chen R, Kwok H and Wong M 2018 IEEE Trans. Electron Dev. 65 142
[11] Wang Y, Wang M, Zhang D and Wang H 2020 Chin. Phys. B 29 118101
[12] Tai Y, Liu H, Chan P and Chiu S 2018 IEEE Electron Dev. Lett. 39 696
[13] Meux A D J D, Bhoolokam A, Pourtois G, Genoe J and Heremans P 2017 Phys. Status Solidi A 214 1770131
[14] Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
[15] Chiu C J, Shih S S, Weng W, Chang S, Hung Z D and Tsai T 2012 IEEE Photon. Technol. Lett. 24 1018
[16] Huang X, Wu C, Lu H, Re H and Xu Q 2012 Appl. Phys. Lett. 100 243505
[17] Lee J, Cho I, Lee J and Kwon H 2008 Appl. Phys. Lett. 93 093504
[18] Qi D, Zhang D and Wang M 2017 Chin. Phys. B 26 128101
[19] Janotti A and Walle C 2005 Appl. Phys. Lett. 87 122102
[20] Li G, Zhan R, Yang B, Liu C, Dong C, Lee C, Wu Y, Lu P, Deng S, Shieh H D and Xu N 2016 IEEE Trans. Electron Dev. 63 4309
[21] Billah M M and Jang J 2017 IEEE Electron Dev. Lett. 38 477

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

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