Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

doi:10.1088/1674-1056/acbde7

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/acbde7

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Rongxing Cao(曹荣幸)^1,†, Kejia Wang(汪柯佳)^1,2, Yang Meng(孟洋)¹, Linhuan Li(李林欢)², Lin Zhao(赵琳)³, Dan Han(韩丹)¹, Yang Liu(刘洋)¹, Shu Zheng(郑澍)¹, Hongxia Li(李红霞)¹, Yuqi Jiang(蒋煜琪)⁴, Xianghua Zeng(曾祥华)¹, and Yuxiong Xue(薛玉雄)^1,‡

1 College of Electrical, Energy and Power Engineering, Yangzhou University, Yangzhou 225127, China;
2 College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China;
3 Institute of Special Environments Physical Sciences, Harbin Institute of Technology, Shenzhen 518055, China;
4 College of Intelligent Manufacturing, Yangzhou Polytechnic Institute, Yangzhou 225002, China

收稿日期:2022-10-23 修回日期:2023-01-04 接受日期:2023-02-22 出版日期:2023-05-17 发布日期:2023-05-24
通讯作者: Rongxing Cao, Yuxiong Xue E-mail:rxcao@yzu.edu.cn;yxxue@yzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12004329), Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2115), Postgraduate Research and Practice Innovation Program of Jiangsu Province (Grant No. SJCX22 1704), and Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University, China (Grant Nos. YZ202026301 and YZ202026306).

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

1 College of Electrical, Energy and Power Engineering, Yangzhou University, Yangzhou 225127, China;
2 College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China;
3 Institute of Special Environments Physical Sciences, Harbin Institute of Technology, Shenzhen 518055, China;
4 College of Intelligent Manufacturing, Yangzhou Polytechnic Institute, Yangzhou 225002, China

Received:2022-10-23 Revised:2023-01-04 Accepted:2023-02-22 Online:2023-05-17 Published:2023-05-24
Contact: Rongxing Cao, Yuxiong Xue E-mail:rxcao@yzu.edu.cn;yxxue@yzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12004329), Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2115), Postgraduate Research and Practice Innovation Program of Jiangsu Province (Grant No. SJCX22 1704), and Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University, China (Grant Nos. YZ202026301 and YZ202026306).

摘要/Abstract

摘要： The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

关键词: SiC power MOSFET, total ionizing dose (TID), single event gate rupture (SEGR), synergistic effect, TCAD simulation

Abstract: The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

Key words: SiC power MOSFET, total ionizing dose (TID), single event gate rupture (SEGR), synergistic effect, TCAD simulation

中图分类号: (Field effect devices)

85.30.Tv

61.80.Az (Theory and models of radiation effects) 61.80.Jh (Ion radiation effects)

Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄). Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs[J]. 中国物理B, 2023, 32(6): 68502-068502.

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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

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