Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

doi:10.1088/1674-1056/ac7ccf

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 117302-117302.doi: 10.1088/1674-1056/ac7ccf

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Zhi-Peng Yin(尹志鹏)¹, Sheng-Sheng Wei(尉升升)¹, Jiao Bai(白娇)¹, Wei-Wei Xie(谢威威)¹, Zhao-Hui Liu(刘兆慧)¹, Fu-Wen Qin(秦福文)², and De-Jun Wang(王德君)^1,†

1 Key Laboratory of Intelligent Control and Optimization for Industrial Equipment, Ministry of Education;School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China;
2 State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), Dalian University of Technology, Dalian 116024, China

收稿日期:2022-05-19 修回日期:2022-06-28 接受日期:2022-06-29 出版日期:2022-10-17 发布日期:2022-11-01
通讯作者: De-Jun Wang E-mail:dwang121@dlut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61874017).

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Zhi-Peng Yin(尹志鹏)¹, Sheng-Sheng Wei(尉升升)¹, Jiao Bai(白娇)¹, Wei-Wei Xie(谢威威)¹, Zhao-Hui Liu(刘兆慧)¹, Fu-Wen Qin(秦福文)², and De-Jun Wang(王德君)^1,†

1 Key Laboratory of Intelligent Control and Optimization for Industrial Equipment, Ministry of Education;School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China;
2 State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), Dalian University of Technology, Dalian 116024, China

Received:2022-05-19 Revised:2022-06-28 Accepted:2022-06-29 Online:2022-10-17 Published:2022-11-01
Contact: De-Jun Wang E-mail:dwang121@dlut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61874017).

1. 附件.pdf(1287KB)

摘要/Abstract

摘要： We investigate the effect of ozone (O₃) oxidation of silicon carbide (SiC) on the flat-band voltage (V_fb) stability of SiC metal-oxide-semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O₃ oxidation, and their V_fb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O₃ oxidation can adjust the element distribution near SiC/SiO₂ interface, improve SiC/SiO₂ interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O₃ oxidation improves the V_fb stability of SiC MOS capacitors by using the measurement results and O₃ oxidation kinetics.

关键词: SiC MOS capacitors, ozone oxidation, bias temperature instability, Deal-Grove model

Abstract: We investigate the effect of ozone (O₃) oxidation of silicon carbide (SiC) on the flat-band voltage (V_fb) stability of SiC metal-oxide-semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O₃ oxidation, and their V_fb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O₃ oxidation can adjust the element distribution near SiC/SiO₂ interface, improve SiC/SiO₂ interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O₃ oxidation improves the V_fb stability of SiC MOS capacitors by using the measurement results and O₃ oxidation kinetics.

Key words: SiC MOS capacitors, ozone oxidation, bias temperature instability, Deal-Grove model

中图分类号: (III-V semiconductors)

73.61.Ey

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 81.65.Mq (Oxidation) 85.30.De (Semiconductor-device characterization, design, and modeling)

Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君). Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors[J]. 中国物理B, 2022, 31(11): 117302-117302.

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Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

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