中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117308-117309.doi: 10.1088/1674-1056/19/11/117308

• • 上一篇    下一篇

Study on the negative bias temperature instability effect under dynamic stress

郝跃1, 曹艳荣2, 马晓华3   

  1. (1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-10-27 修回日期:2010-06-05 出版日期:2010-11-15 发布日期:2010-11-15
  • 基金资助:
    Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Study on the negative bias temperature instability effect under dynamic stress

Ma Xiao-Hua(马晓华)a)†, Cao Yan-Rong(曹艳荣) b), and Hao Yue(郝跃)c)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071, China; c Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2009-10-27 Revised:2010-06-05 Online:2010-11-15 Published:2010-11-15
  • Supported by:
    Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

PDF (PC)

618

赞

摘要： This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.

Abstract: This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.

Key words: negative bias temperature instability, dynamic stress, recovery

中图分类号:  (Field effect devices)

  • 85.30.Tv