Energy distribution extraction of negative charges responsible for positive bias temperature instability

doi:10.1088/1674-1056/24/7/077304

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77304-077304.doi: 10.1088/1674-1056/24/7/077304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Energy distribution extraction of negative charges responsible for positive bias temperature instability

任尚清, 杨红, 王文武, 唐波, 唐兆云, 王晓磊, 徐昊, 罗维春, 赵超, 闫江, 陈大鹏, 叶甜春

Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, Beijing 100029, China

收稿日期:2014-12-09 修回日期:2015-03-17 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Science & Technology Major Projects of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

Energy distribution extraction of negative charges responsible for positive bias temperature instability

Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, Beijing 100029, China

Received:2014-12-09 Revised:2015-03-17 Online:2015-07-05 Published:2015-07-05
Contact: Ren Shang-Qing, Wang Wen-Wu E-mail:renshangqing@ime.ac.cn;wangwenwu@ime.ac.cn
Supported by:
Project supported by the National Science & Technology Major Projects of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

摘要/Abstract

摘要：

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of nMOSFET during positive bias temperature instability (PBTI) stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy, and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

关键词: positive bias temperature instability, high-k/metal gate, electron trapping, energy distribution

Abstract:

Key words: positive bias temperature instability, high-k/metal gate, electron trapping, energy distribution

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices)

任尚清, 杨红, 王文武, 唐波, 唐兆云, 王晓磊, 徐昊, 罗维春, 赵超, 闫江, 陈大鹏, 叶甜春. Energy distribution extraction of negative charges responsible for positive bias temperature instability[J]. 中国物理B, 2015, 24(7): 77304-077304.

Ren Shang-Qing (任尚清), Yang Hong (杨红), Wang Wen-Wu (王文武), Tang Bo (唐波), Tang Zhao-Yun (唐兆云), Wang Xiao-Lei (王晓磊), Xu Hao (徐昊), Luo Wei-Chun (罗维春), Zhao Chao (赵超), Yan Jiang (闫江), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春). Energy distribution extraction of negative charges responsible for positive bias temperature instability[J]. Chin. Phys. B, 2015, 24(7): 77304-077304.

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Energy distribution extraction of negative charges responsible for positive bias temperature instability

Energy distribution extraction of negative charges responsible for positive bias temperature instability

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