Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature

doi:10.1088/1674-1056/abd749

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 58101-058101.doi: 10.1088/1674-1056/abd749

Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature

Yu Fu(付裕)¹, Rui-Min Xu(徐锐敏)¹, Xin-Xin Yu(郁鑫鑫)², Jian-Jun Zhou(周建军)², Yue-Chan Kong(孔月婵)², Tang-Sheng Chen(陈堂胜)², Bo Yan(延波)¹, Yan-Rong Li(李言荣)^1,3, Zheng-Qiang Ma(马正强)⁴, and Yue-Hang Xu(徐跃杭)^1,†

1 University of Electronic Science and Technology of China, Chengdu 611731, China;
2 Nanjing Electronic Devices Institute, Nanjing 210016, China;
3 Sichuan University, Chengdu 610041, China;
4 University of Wisconsin-Madison, Madison, WI 53705, USA

收稿日期:2020-10-05 修回日期:2020-11-26 接受日期:2020-12-30 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Yue-Hang Xu E-mail:yuehangxu@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61922021), the National Key Research and Development Project, China (Grant No. 2018YFE0115500), and the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration, China.

Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature

1 University of Electronic Science and Technology of China, Chengdu 611731, China;
2 Nanjing Electronic Devices Institute, Nanjing 210016, China;
3 Sichuan University, Chengdu 610041, China;
4 University of Wisconsin-Madison, Madison, WI 53705, USA

Received:2020-10-05 Revised:2020-11-26 Accepted:2020-12-30 Online:2021-05-14 Published:2021-05-14
Contact: Yue-Hang Xu E-mail:yuehangxu@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61922021), the National Key Research and Development Project, China (Grant No. 2018YFE0115500), and the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration, China.

摘要/Abstract

摘要： The interface state of hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric processes. The devices use Al$_{2}$O$_{3}$ as gate dielectrics that are deposited via atomic layer deposition (ALD) at 80 $^\circ$C and 300 $^\circ$C, respectively, and their $C$-$V$ and $I$-$V$ characteristics are comparatively investigated. Mott-Schottky plots ($1/C^{2}$-$V_{\rm G}$) suggest that positive and negative fixed charges with low density of about 10$^{11}$ cm$^{-2}$ are located in the 80-$^\circ$C- and 300-$^\circ$C deposition Al$_{2}$O$_{3}$ films, respectively. The analyses of direct current (DC)/pulsed $I$-$V$ and frequency-dependent conductance show that the shallow interface traps (0.46 eV-0.52 eV and 0.53 eV-0.56 eV above the valence band of diamond for the 80-$^\circ$C and 300-$^\circ$C deposition conditions, respectively) with distinct density ($7.8 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$-$8.5 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$ and $2.2 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$-$5.1 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$ for the 80-$^\circ$C- and 300-$^\circ$C-deposition conditions, respectively) are present at the Al$_{2}$O$_{3}$/C-H diamond interface. Dynamic pulsed $I$-$V$ and capacitance dispersion results indicate that the ALD Al$_{2}$O$_{3}$ technique with 300-$^\circ$C deposition temperature has higher stability for C-H diamond MOSFETs.

关键词: diamond MOSFET, ALD temperature, pulsed I-V, interface trap, conductance method

Abstract: The interface state of hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric processes. The devices use Al$_{2}$O$_{3}$ as gate dielectrics that are deposited via atomic layer deposition (ALD) at 80 $^\circ$C and 300 $^\circ$C, respectively, and their $C$-$V$ and $I$-$V$ characteristics are comparatively investigated. Mott-Schottky plots ($1/C^{2}$-$V_{\rm G}$) suggest that positive and negative fixed charges with low density of about 10$^{11}$ cm$^{-2}$ are located in the 80-$^\circ$C- and 300-$^\circ$C deposition Al$_{2}$O$_{3}$ films, respectively. The analyses of direct current (DC)/pulsed $I$-$V$ and frequency-dependent conductance show that the shallow interface traps (0.46 eV-0.52 eV and 0.53 eV-0.56 eV above the valence band of diamond for the 80-$^\circ$C and 300-$^\circ$C deposition conditions, respectively) with distinct density ($7.8 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$-$8.5 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$ and $2.2 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$-$5.1 \times 10^{13}$ eV$^{-1}\cdot$cm$^{-2}$ for the 80-$^\circ$C- and 300-$^\circ$C-deposition conditions, respectively) are present at the Al$_{2}$O$_{3}$/C-H diamond interface. Dynamic pulsed $I$-$V$ and capacitance dispersion results indicate that the ALD Al$_{2}$O$_{3}$ technique with 300-$^\circ$C deposition temperature has higher stability for C-H diamond MOSFETs.

Key words: diamond MOSFET, ALD temperature, pulsed I-V, interface trap, conductance method

中图分类号: (Diamond)

81.05.ug

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭). Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature[J]. 中国物理B, 2021, 30(5): 58101-058101.

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Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature

Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature

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