中国物理B ›› 2021, Vol. 30 ›› Issue (2): 28102-0.doi: 10.1088/1674-1056/abcf93

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  • 收稿日期:2020-11-14 修回日期:2020-11-27 接受日期:2020-12-02 出版日期:2021-01-18 发布日期:2021-01-18

Molecular beam epitaxy growth of iodide thin films

Xinqiang Cai(蔡新强)1, Zhilin Xu(徐智临)1, Shuai-Hua Ji(季帅华) 1, Na Li(李娜)2,†, and Xi Chen(陈曦)1   

  1. 1 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; 2 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
  • Received:2020-11-14 Revised:2020-11-27 Accepted:2020-12-02 Online:2021-01-18 Published:2021-01-18
  • Contact: Corresponding author. E-mail: na-li07@pku.edu.cn
  • Supported by:
    Project supported by the Science Challenge Project (Grant No. TZ2016004).

Abstract: Study of two-dimensional (2D) magnetic materials is important for both fundamental research and application. Here we report molecular beam epitaxy growth of iodides, candidates for exhibiting 2D magnetism. Decomposition of CrI3 is utilized to produce stable gaseous I2 flux. Growth of MnI2, GdI3, and CrI2 down to monolayer is successful achieved by co-depositing I2 and corresponding metal atoms. The thin films of the three materials are characterized by scanning tunneling microscope and found to be insulators with bandgaps of 4.4 eV, 0.6 eV, and 3.0 eV, respectively. The film growth paves the way for further study of magnetic properties at the 2D limit.

Key words: two-dimensional magnetism, iodide thin films, molecular beam epitaxy, scanning tunneling microscope

中图分类号:  (Molecular, atomic, ion, and chemical beam epitaxy)

  • 81.15.Hi
75.50.Pp (Magnetic semiconductors) 07.79.Cz (Scanning tunneling microscopes) 73.22.-f (Electronic structure of nanoscale materials and related systems)