中国物理B ›› 2022, Vol. 31 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/ac339d

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Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

Zhen-Hua Li(李振华)1,2, Peng-Fei Shao(邵鹏飞)1, Gen-Jun Shi(施根俊)1, Yao-Zheng Wu(吴耀政)1, Zheng-Peng Wang(汪正鹏)1, Si-Qi Li(李思琦)1, Dong-Qi Zhang(张东祺)1, Tao Tao(陶涛)1, Qing-Jun Xu(徐庆君)3, Zi-Li Xie(谢自力)1, Jian-Dong Ye(叶建东)1, Dun-Jun Chen(陈敦军)1, Bin Liu(刘斌)1,†, Ke Wang(王科)1,‡, You-Dou Zheng(郑有炓)1, and Rong Zhang(张荣)1,4   

  1. 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
    2 College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China;
    3 Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China;
    4 Xiamen University, Xiamen 361005, China
  • 收稿日期:2021-08-23 修回日期:2021-10-18 接受日期:2021-10-27 出版日期:2021-12-03 发布日期:2021-12-18
  • 通讯作者: Bin Liu, Ke Wang E-mail:bliu@nju.edu.cn;kewang@nju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, and 61974065), the Fundamental Research Funds for the Central Universities, China (Grant No. 14380166), Key R&D Program of Jiangsu Province, China (Grant No. BE2020004-3), the National Key R&D Program of China (Grant No. 2017YFB0404101), Nature Science Foundation of Jiangsu Province, China (Grant No. BE2015111), Collaborative Innovation Center of Solid State Lighting and Energysaving Electronics.

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

Zhen-Hua Li(李振华)1,2, Peng-Fei Shao(邵鹏飞)1, Gen-Jun Shi(施根俊)1, Yao-Zheng Wu(吴耀政)1, Zheng-Peng Wang(汪正鹏)1, Si-Qi Li(李思琦)1, Dong-Qi Zhang(张东祺)1, Tao Tao(陶涛)1, Qing-Jun Xu(徐庆君)3, Zi-Li Xie(谢自力)1, Jian-Dong Ye(叶建东)1, Dun-Jun Chen(陈敦军)1, Bin Liu(刘斌)1,†, Ke Wang(王科)1,‡, You-Dou Zheng(郑有炓)1, and Rong Zhang(张荣)1,4   

  1. 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
    2 College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China;
    3 Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China;
    4 Xiamen University, Xiamen 361005, China
  • Received:2021-08-23 Revised:2021-10-18 Accepted:2021-10-27 Online:2021-12-03 Published:2021-12-18
  • Contact: Bin Liu, Ke Wang E-mail:bliu@nju.edu.cn;kewang@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, and 61974065), the Fundamental Research Funds for the Central Universities, China (Grant No. 14380166), Key R&D Program of Jiangsu Province, China (Grant No. BE2020004-3), the National Key R&D Program of China (Grant No. 2017YFB0404101), Nature Science Foundation of Jiangsu Province, China (Grant No. BE2015111), Collaborative Innovation Center of Solid State Lighting and Energysaving Electronics.

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摘要： A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 μm/h) has been conducted in a wide growth temperature range, in order to guide future growth of sophisticated fine structures for quantum device applications. Similar to usual growths with higher growth rates, three growth regions have been revealed, namely, Ga droplets, slightly Ga-rich and N-rich 3D growth regions. The slightly Ga-rich region is preferred, in which GaN epilayers demonstrate optimal crystalline quality, which has been demonstrated by streaky RHEED patterns, atomic smooth surface morphology, and very low defect related yellow and blue luminescence bands. The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window (～ 700-760 ℃) has been identified. The growth rate shows a strong dependence on growth temperatures in the optimal temperature window, and attention must be paid when growing fine structures at a low growth rate. Mg and Si doped GaN were also studied, and both p- and n-type materials were obtained.

关键词: GaN, molecular beam epitaxy (MBE), low growth rate, growth diagram

Abstract: A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 μm/h) has been conducted in a wide growth temperature range, in order to guide future growth of sophisticated fine structures for quantum device applications. Similar to usual growths with higher growth rates, three growth regions have been revealed, namely, Ga droplets, slightly Ga-rich and N-rich 3D growth regions. The slightly Ga-rich region is preferred, in which GaN epilayers demonstrate optimal crystalline quality, which has been demonstrated by streaky RHEED patterns, atomic smooth surface morphology, and very low defect related yellow and blue luminescence bands. The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window (～ 700-760 ℃) has been identified. The growth rate shows a strong dependence on growth temperatures in the optimal temperature window, and attention must be paid when growing fine structures at a low growth rate. Mg and Si doped GaN were also studied, and both p- and n-type materials were obtained.

Key words: GaN, molecular beam epitaxy (MBE), low growth rate, growth diagram

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)