中国物理B ›› 2021, Vol. 30 ›› Issue (7): 78104-078104.doi: 10.1088/1674-1056/abf63f

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Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

Shuang Sun(孙爽)1, Jian-Huan Wang(王建桓)3, Bao-Tong Zhang(张宝通)1, Xiao-Kang Li(李小康)1, Qi-Feng Cai(蔡其峰)1, Xia An(安霞)1, Xiao-Yan Xu(许晓燕)1, Jian-Jun Zhang(张建军)3,†, and Ming Li(黎明)1,2,‡   

  1. 1 Department of Micro-Nanoelectronics, Peking University, Beijing 100871, China;
    2 Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing 100871, China;
    3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2021-01-25 修回日期:2021-04-01 接受日期:2021-04-09 出版日期:2021-06-22 发布日期:2021-06-24
  • 通讯作者: Jian-Jun Zhang, Ming Li E-mail:jjzhang@iphy.ac.cn;liming.ime@pku.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200504) and the National Natural Science Foundation of China (Grant No. 61927901).

Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

Shuang Sun(孙爽)1, Jian-Huan Wang(王建桓)3, Bao-Tong Zhang(张宝通)1, Xiao-Kang Li(李小康)1, Qi-Feng Cai(蔡其峰)1, Xia An(安霞)1, Xiao-Yan Xu(许晓燕)1, Jian-Jun Zhang(张建军)3,†, and Ming Li(黎明)1,2,‡   

  1. 1 Department of Micro-Nanoelectronics, Peking University, Beijing 100871, China;
    2 Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing 100871, China;
    3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2021-01-25 Revised:2021-04-01 Accepted:2021-04-09 Online:2021-06-22 Published:2021-06-24
  • Contact: Jian-Jun Zhang, Ming Li E-mail:jjzhang@iphy.ac.cn;liming.ime@pku.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200504) and the National Natural Science Foundation of China (Grant No. 61927901).

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摘要： A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a channel with low density defects for high-performance FinFET technology. In order to study the effects of fin width and crystallography orientation on the MBE behavior, a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of <100> and <110>. The result shows that a defect-free Si film was obtained on the fin by MBE, since the etching damage was confined in the bottom of the epitaxial layer. In addition, the vertical growth of the epitaxial Si layer was observed on sub-10 nm <100> Si fins, and this was explained by a kinetic mechanism.

关键词: sub-10 nm fin, molecular beam epitaxy, defects, mobility

Abstract: A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a channel with low density defects for high-performance FinFET technology. In order to study the effects of fin width and crystallography orientation on the MBE behavior, a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of <100> and <110>. The result shows that a defect-free Si film was obtained on the fin by MBE, since the etching damage was confined in the bottom of the epitaxial layer. In addition, the vertical growth of the epitaxial Si layer was observed on sub-10 nm <100> Si fins, and this was explained by a kinetic mechanism.

Key words: sub-10 nm fin, molecular beam epitaxy, defects, mobility

中图分类号:  (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

  • 81.10.-h
61.72.uf (Ge and Si) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 73.50.Dn (Low-field transport and mobility; piezoresistance)