Molecular beam epitaxy growth of iodide thin films

doi:10.1088/1674-1056/abcf93

中国物理B ›› 2021, Vol. 30 ›› Issue (2): 28102-0.doi: 10.1088/1674-1056/abcf93

收稿日期:2020-11-14 修回日期:2020-11-27 接受日期:2020-12-02 出版日期:2021-01-18 发布日期:2021-01-18

Molecular beam epitaxy growth of iodide thin films

Xinqiang Cai(蔡新强)¹, Zhilin Xu(徐智临)¹, Shuai-Hua Ji(季帅华)¹, Na Li(李娜)^2,†, and Xi Chen(陈曦)¹

1 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; 2 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

Received:2020-11-14 Revised:2020-11-27 Accepted:2020-12-02 Online:2021-01-18 Published:2021-01-18
Contact: ^†Corresponding author. E-mail: na-li07@pku.edu.cn
Supported by:
Project supported by the Science Challenge Project (Grant No. TZ2016004).

摘要/Abstract

Abstract: Study of two-dimensional (2D) magnetic materials is important for both fundamental research and application. Here we report molecular beam epitaxy growth of iodides, candidates for exhibiting 2D magnetism. Decomposition of CrI₃ is utilized to produce stable gaseous I₂ flux. Growth of MnI₂, GdI₃, and CrI₂ down to monolayer is successful achieved by co-depositing I₂ and corresponding metal atoms. The thin films of the three materials are characterized by scanning tunneling microscope and found to be insulators with bandgaps of 4.4 eV, 0.6 eV, and 3.0 eV, respectively. The film growth paves the way for further study of magnetic properties at the 2D limit.

Key words: two-dimensional magnetism, iodide thin films, molecular beam epitaxy, scanning tunneling microscope

中图分类号: (Molecular, atomic, ion, and chemical beam epitaxy)

81.15.Hi

75.50.Pp (Magnetic semiconductors) 07.79.Cz (Scanning tunneling microscopes) 73.22.-f (Electronic structure of nanoscale materials and related systems)

. [J]. 中国物理B, 2021, 30(2): 28102-0.

Xinqiang Cai(蔡新强), Zhilin Xu(徐智临), Shuai-Hua Ji(季帅华), Na Li(李娜), and Xi Chen(陈曦). Molecular beam epitaxy growth of iodide thin films[J]. Chin. Phys. B, 2021, 30(2): 28102-0.

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Molecular beam epitaxy growth of iodide thin films

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