Electronic structure of molecular beam epitaxy grown 1T'-MoTe2 film and strain effect

doi:10.1088/1674-1056/ab43ba

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/ab43ba

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect

Xue Zhou(周雪), Zeyu Jiang(姜泽禹), Kenan Zhang(张柯楠), Wei Yao(姚维), Mingzhe Yan(颜明哲), Hongyun Zhang(张红云), Wenhui Duan(段文晖), Shuyun Zhou(周树云)

1 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

收稿日期:2019-06-18 修回日期:2019-09-06 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Shuyun Zhou E-mail:syzhou@mail.tsinghua.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0301004 and 2015CB921001) and the National Natural Science Foundation of China (Grant Nos. 11334006, 11725418, and 11674188).

Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect

Xue Zhou(周雪)¹, Zeyu Jiang(姜泽禹)¹, Kenan Zhang(张柯楠)¹, Wei Yao(姚维)¹, Mingzhe Yan(颜明哲)¹, Hongyun Zhang(张红云)¹, Wenhui Duan(段文晖)¹, Shuyun Zhou(周树云)^1,2

1 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

Received:2019-06-18 Revised:2019-09-06 Online:2019-10-05 Published:2019-10-05
Contact: Shuyun Zhou E-mail:syzhou@mail.tsinghua.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0301004 and 2015CB921001) and the National Natural Science Foundation of China (Grant Nos. 11334006, 11725418, and 11674188).

摘要/Abstract

摘要：

Atomically thin transition metal dichalcogenide films with distorted trigonal (1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T'-MoTe₂ films grown by molecular beam epitaxy (MBE). Growth of the 1T'-MoTe₂ film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction (RHEED) and sharp diffraction spots in the low energy electron diffraction (LEED). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T'-MoTe₂ films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.

关键词: quantum spin Hall effect, 1T', -MoTe₂, molecular beam epitaxy (MBE), transition metal dichalcogenides (TMDCs)

Abstract:

Key words: quantum spin Hall effect, 1T', -MoTe₂, molecular beam epitaxy (MBE), transition metal dichalcogenides (TMDCs)

中图分类号: (Quantum Hall effects)

73.43.-f

81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 71.15.-m (Methods of electronic structure calculations) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

周雪, 姜泽禹, 张柯楠, 姚维, 颜明哲, 张红云, 段文晖, 周树云. Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect[J]. 中国物理B, 2019, 28(10): 107307-107307.

Xue Zhou(周雪), Zeyu Jiang(姜泽禹), Kenan Zhang(张柯楠), Wei Yao(姚维), Mingzhe Yan(颜明哲), Hongyun Zhang(张红云), Wenhui Duan(段文晖), Shuyun Zhou(周树云). Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect[J]. Chin. Phys. B, 2019, 28(10): 107307-107307.

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Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect

Electronic structure of molecular beam epitaxy grown 1T'-MoTe₂ film and strain effect

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