中国物理B ›› 2021, Vol. 30 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/abf920
Yu-Bin Kang(亢玉彬)1, Feng-Yuan Lin(林逢源)1,†, Ke-Xue Li(李科学)1, Ji-Long Tang(唐吉龙)1,‡, Xiao-Bing Hou(侯效兵)1, Deng-Kui Wang(王登魁)1, Xuan Fang(方铉)1, Dan Fang(房丹)1, Xin-Wei Wang(王新伟)2, and Zhi-Peng Wei(魏志鹏)1
Yu-Bin Kang(亢玉彬)1, Feng-Yuan Lin(林逢源)1,†, Ke-Xue Li(李科学)1, Ji-Long Tang(唐吉龙)1,‡, Xiao-Bing Hou(侯效兵)1, Deng-Kui Wang(王登魁)1, Xuan Fang(方铉)1, Dan Fang(房丹)1, Xin-Wei Wang(王新伟)2, and Zhi-Peng Wei(魏志鹏)1
摘要: The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group Ⅲ-V elements and Si. High-crystallinity uniform GaAs NW arrays were grown by solid-source molecular beam epitaxy (MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of GaAs NW arrays was investigated and is discussed in detail. The GaAs NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform Ⅲ-V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.
中图分类号: (Structure of nanoscale materials)