中国物理B ›› 2021, Vol. 30 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/abf920

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Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy

Yu-Bin Kang(亢玉彬)1, Feng-Yuan Lin(林逢源)1,†, Ke-Xue Li(李科学)1, Ji-Long Tang(唐吉龙)1,‡, Xiao-Bing Hou(侯效兵)1, Deng-Kui Wang(王登魁)1, Xuan Fang(方铉)1, Dan Fang(房丹)1, Xin-Wei Wang(王新伟)2, and Zhi-Peng Wei(魏志鹏)1   

  1. 1 State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;
    2 School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • 收稿日期:2021-03-03 修回日期:2021-03-30 接受日期:2021-04-19 出版日期:2021-06-22 发布日期:2021-06-24
  • 通讯作者: Feng-Yuan Lin, Ji-Long Tang E-mail:linfengyuan_0116@163.com;jl_tangcust@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61674021, 11674038, 61704011, 61904017, 11804335, and 12074045), the Developing Project of Science and Technology of Jilin Province, China (Grant No. 20200301052RQ), the Project of Education Department of Jilin Province, China (Grant No. JJKH20200763KJ), and the Youth Foundation of Changchun University of Science and Technology (Grant No. XQNJJ-2018-18).

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy

Yu-Bin Kang(亢玉彬)1, Feng-Yuan Lin(林逢源)1,†, Ke-Xue Li(李科学)1, Ji-Long Tang(唐吉龙)1,‡, Xiao-Bing Hou(侯效兵)1, Deng-Kui Wang(王登魁)1, Xuan Fang(方铉)1, Dan Fang(房丹)1, Xin-Wei Wang(王新伟)2, and Zhi-Peng Wei(魏志鹏)1   

  1. 1 State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;
    2 School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2021-03-03 Revised:2021-03-30 Accepted:2021-04-19 Online:2021-06-22 Published:2021-06-24
  • Contact: Feng-Yuan Lin, Ji-Long Tang E-mail:linfengyuan_0116@163.com;jl_tangcust@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61674021, 11674038, 61704011, 61904017, 11804335, and 12074045), the Developing Project of Science and Technology of Jilin Province, China (Grant No. 20200301052RQ), the Project of Education Department of Jilin Province, China (Grant No. JJKH20200763KJ), and the Youth Foundation of Changchun University of Science and Technology (Grant No. XQNJJ-2018-18).

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摘要： The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group Ⅲ-V elements and Si. High-crystallinity uniform GaAs NW arrays were grown by solid-source molecular beam epitaxy (MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of GaAs NW arrays was investigated and is discussed in detail. The GaAs NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform Ⅲ-V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.

关键词: GaAs, nanowire arrays, self-catalyzed, molecular beam epitaxy

Abstract: The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group Ⅲ-V elements and Si. High-crystallinity uniform GaAs NW arrays were grown by solid-source molecular beam epitaxy (MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of GaAs NW arrays was investigated and is discussed in detail. The GaAs NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform Ⅲ-V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.

Key words: GaAs, nanowire arrays, self-catalyzed, molecular beam epitaxy

中图分类号:  (Structure of nanoscale materials)

  • 61.46.-w
07.79.Pk (Magnetic force microscopes) 81.10.Bk (Growth from vapor) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)