Short-wave infrared InGaAs photodetectors and focal plane arrays

doi:10.1088/1674-1056/27/12/128102

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 128102-128102.doi: 10.1088/1674-1056/27/12/128102

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Photodetector: materials, physics, and applications • 上一篇下一篇

Short-wave infrared InGaAs photodetectors and focal plane arrays

Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊)

1 Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2018-09-06 修回日期:2018-09-21 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Yong-Gang Zhang E-mail:ygzhang@mail.sim.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900).

Short-wave infrared InGaAs photodetectors and focal plane arrays

Yong-Gang Zhang(张永刚)^1,2, Yi Gu(顾溢)^1,2, Xiu-Mei Shao(邵秀梅)¹, Xue Li(李雪)¹, Hai-Mei Gong(龚海梅)¹, Jia-Xiong Fang(方家熊)¹

1 Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2018-09-06 Revised:2018-09-21 Online:2018-12-05 Published:2018-12-05
Contact: Yong-Gang Zhang E-mail:ygzhang@mail.sim.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900).

摘要/Abstract

摘要：

In this article, unique spectral features of short-wave infrared band of 1 μ-3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelength-extended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

关键词: InGaAs, short-wave infrared, photodetectors, focal plane arrays

Abstract:

Key words: InGaAs, short-wave infrared, photodetectors, focal plane arrays

中图分类号: (III-V semiconductors)

81.05.Ea

85.60.Dw (Photodiodes; phototransistors; photoresistors) 72.40.+w (Photoconduction and photovoltaic effects) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)

张永刚, 顾溢, 邵秀梅, 李雪, 龚海梅, 方家熊. Short-wave infrared InGaAs photodetectors and focal plane arrays[J]. 中国物理B, 2018, 27(12): 128102-128102.

Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊). Short-wave infrared InGaAs photodetectors and focal plane arrays[J]. Chin. Phys. B, 2018, 27(12): 128102-128102.

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Short-wave infrared InGaAs photodetectors and focal plane arrays

Short-wave infrared InGaAs photodetectors and focal plane arrays

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