中国物理B ›› 2021, Vol. 30 ›› Issue (1): 18103-.doi: 10.1088/1674-1056/abb801

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  • 收稿日期:2020-07-29 修回日期:2020-08-28 接受日期:2020-09-14 出版日期:2020-12-17 发布日期:2020-12-23

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

Zi-Kun Cao(曹子坤)1,2, De-Gang Zhao(赵德刚)1,3,†, Jing Yang(杨静)1, Jian-Jun Zhu(朱建军)1,3, Feng Liang(梁锋)1, and Zong-Shun Liu(刘宗顺)1   

  1. 1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China; 3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2020-07-29 Revised:2020-08-28 Accepted:2020-09-14 Online:2020-12-17 Published:2020-12-23
  • Contact: †Corresponding author. E-mail: dgzhao@red.semi.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).

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Abstract: We propose a metal organic vapor phase epitaxy (MOVPE) method of pre-introducing TMIn during the growth of u-GaN to improve the subsequent growth of InGaN and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive InGaN growth rate. Further x-ray diffraction (XRD), photoluminescence (PL), and atomic force microscope (AFM) tests showed that the quality of InGaN is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when InGaN is grown, so as to improve the material quality.

Key words: InGaN, metal organic vapor phase epitaxy (MOVPE)

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.70.Dm (X-ray absorption spectra) 78.55.-m (Photoluminescence, properties and materials)