中国物理B ›› 2022, Vol. 31 ›› Issue (4): 48101-048101.doi: 10.1088/1674-1056/ac272b

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Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

Feng Xiao(肖峰)1,2, Qin Han(韩勤)1,2,†, Han Ye(叶焓)1, Shuai Wang(王帅)1, Zi-Qing Lu(陆子晴)1,2, and Fan Xiao(肖帆)1,2   

  1. 1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-06-08 修回日期:2021-09-02 接受日期:2021-09-16 出版日期:2022-03-16 发布日期:2022-03-10
  • 通讯作者: Qin Han E-mail:hanqin@semi.ac.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2020YFB1805701), the National Natural Foundation of China (Grant Nos. 61934003, 61635010, and 61674136), and Beijing Natural Science Foundation, China (Grant No. 4194093).

Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

Feng Xiao(肖峰)1,2, Qin Han(韩勤)1,2,†, Han Ye(叶焓)1, Shuai Wang(王帅)1, Zi-Qing Lu(陆子晴)1,2, and Fan Xiao(肖帆)1,2   

  1. 1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-06-08 Revised:2021-09-02 Accepted:2021-09-16 Online:2022-03-16 Published:2022-03-10
  • Contact: Qin Han E-mail:hanqin@semi.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2020YFB1805701), the National Natural Foundation of China (Grant Nos. 61934003, 61635010, and 61674136), and Beijing Natural Science Foundation, China (Grant No. 4194093).

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摘要： We have realized integration of evanescent wave coupled photodetector (ECPD) and multi-quantum well (MQW) semiconductor optical amplifier (SOA) on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas. The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth. By comparing the etching profiles of different non-selective etchants, we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2HBr:2H3PO4:K2Cr2O7 wet etching. A high growth temperature of 680 ℃ is found helpful to enhance planar regrowth. By comparing the growth morphologies and simulating optical transmission along different directions, we determined that waveguides should travel across the regrowth interface along the [110] direction. The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores. ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W. The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

关键词: butt-joint regrowth, etching profile, non-reentrant mesa, photonic integration

Abstract: We have realized integration of evanescent wave coupled photodetector (ECPD) and multi-quantum well (MQW) semiconductor optical amplifier (SOA) on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas. The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth. By comparing the etching profiles of different non-selective etchants, we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2HBr:2H3PO4:K2Cr2O7 wet etching. A high growth temperature of 680 ℃ is found helpful to enhance planar regrowth. By comparing the growth morphologies and simulating optical transmission along different directions, we determined that waveguides should travel across the regrowth interface along the [110] direction. The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores. ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W. The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

Key words: butt-joint regrowth, etching profile, non-reentrant mesa, photonic integration

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Kk (Vapor phase epitaxy; growth from vapor phase)