中国物理B ›› 2021, Vol. 30 ›› Issue (11): 110201-110201.doi: 10.1088/1674-1056/abfd9f

• •    下一篇

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Guo-Feng Wu(武国峰)1, Jun Wang(王俊)1,†, Wei-Rong Chen(陈维荣)1, Li-Na Zhu(祝丽娜)1, Yuan-Qing Yang(杨苑青)1, Jia-Chen Li(李家琛)1, Chun-Yang Xiao(肖春阳)1, Yong-Qing Huang(黄永清)1, Xiao-Min Ren(任晓敏)1, Hai-Ming Ji(季海铭)2, and Shuai Luo(罗帅)2   

  1. 1 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-01-27 修回日期:2021-04-23 接受日期:2021-05-01 出版日期:2021-10-13 发布日期:2021-10-22
  • 通讯作者: Jun Wang E-mail:wangjun12@bupt.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No. Z191100004819012), the Project of the State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China (Grant No. IPOC2018ZT01), and the 111 Project of China (Grant No. B07005).

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Guo-Feng Wu(武国峰)1, Jun Wang(王俊)1,†, Wei-Rong Chen(陈维荣)1, Li-Na Zhu(祝丽娜)1, Yuan-Qing Yang(杨苑青)1, Jia-Chen Li(李家琛)1, Chun-Yang Xiao(肖春阳)1, Yong-Qing Huang(黄永清)1, Xiao-Min Ren(任晓敏)1, Hai-Ming Ji(季海铭)2, and Shuai Luo(罗帅)2   

  1. 1 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-01-27 Revised:2021-04-23 Accepted:2021-05-01 Online:2021-10-13 Published:2021-10-22
  • Contact: Jun Wang E-mail:wangjun12@bupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No. Z191100004819012), the Project of the State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China (Grant No. IPOC2018ZT01), and the 111 Project of China (Grant No. B07005).

RichHTML

2

PDF (PC)

85

赞

摘要： The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 1011 cm-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

关键词: InAs/GaAs quantum dots, threading dislocation, finite element method, bending area

Abstract: The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 1011 cm-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

Key words: InAs/GaAs quantum dots, threading dislocation, finite element method, bending area

中图分类号:  (Finite-element and Galerkin methods)

  • 02.70.Dh
03.65.Db (Functional analytical methods) 61.50.Ah (Theory of crystal structure, crystal symmetry; calculations and modeling) 81.05.Ea (III-V semiconductors)