Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric

doi:10.1088/1674-1056/ab696b

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/ab696b

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2019-12-02 修回日期:2020-01-06 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

Tao-Tao Que(阙陶陶)¹, Ya-Wen Zhao(赵亚文)¹, Liu-An Li(李柳暗)¹, Liang He(何亮)², Qiu-Ling Qiu(丘秋凌)¹, Zhen-Xing Liu(刘振兴)¹, Jin-Wei Zhang(张津玮)¹, Jia Chen(陈佳)¹, Zhi-Sheng Wu(吴志盛)¹, Yang Liu(刘扬)¹

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Received:2019-12-02 Revised:2020-01-06 Online:2020-03-05 Published:2020-03-05
Contact: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

摘要/Abstract

摘要： The effect of high overdrive voltage on the positive bias temperature instability (PBTI) trapping behavior is investigated for GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency-conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

关键词: gallium nitride, LPCVD-SiN_x MIS-HEMTs, overdrive voltage, trapping behavior

Abstract: The effect of high overdrive voltage on the positive bias temperature instability (PBTI) trapping behavior is investigated for GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency-conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

Key words: gallium nitride, LPCVD-SiN_x MIS-HEMTs, overdrive voltage, trapping behavior

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

72.80.Sk (Insulators) 73.20.At (Surface states, band structure, electron density of states) 77.22.Jp (Dielectric breakdown and space-charge effects)

阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. 中国物理B, 2020, 29(3): 37201-037201.

Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬). Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. Chin. Phys. B, 2020, 29(3): 37201-037201.

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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

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