中国物理B ›› 2020, Vol. 29 ›› Issue (3): 37101-037101.doi: 10.1088/1674-1056/ab696e
所属专题: SPECIAL TOPIC — Topological semimetals
• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇 下一篇
D S Wu(吴德胜), Y T Qian(钱玉婷), Z Y Liu(刘子懿), W Wu(吴伟), Y J Li(李延杰), S H Na(那世航), Y T Shao(邵钰婷), P Zheng(郑萍), G Li(李岗), J G Cheng(程金光), H M Weng(翁红明), J L Luo(雒建林)
D S Wu(吴德胜)1,2, Y T Qian(钱玉婷)1,2, Z Y Liu(刘子懿)1,2, W Wu(吴伟)1,2, Y J Li(李延杰)1,2, S H Na(那世航)1,2, Y T Shao(邵钰婷)1,2, P Zheng(郑萍)1,2, G Li(李岗)1,2,3, J G Cheng(程金光)1,2,3, H M Weng(翁红明)1,2,3, J L Luo(雒建林)1,2,3
摘要: We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62×1018 cm-3 at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.
中图分类号: (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)