Aging mechanism of GaN-based yellow LEDs with V-pits

doi:10.1088/1674-1056/28/6/067305

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/28/6/067305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Aging mechanism of GaN-based yellow LEDs with V-pits

Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

收稿日期:2019-03-13 修回日期:2019-04-02 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Fang Fang E-mail:41770109@qq.com
基金资助:
Project supported by the National Natural Science Foundation for Young Scientists of China (Grant Nos. 61704069 and 51602141) and the National Key Research and Development Program of China (Grant No. 2016YFB0400601).

Aging mechanism of GaN-based yellow LEDs with V-pits

Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

Received:2019-03-13 Revised:2019-04-02 Online:2019-06-05 Published:2019-06-05
Contact: Fang Fang E-mail:41770109@qq.com
Supported by:
Project supported by the National Natural Science Foundation for Young Scientists of China (Grant Nos. 61704069 and 51602141) and the National Key Research and Development Program of China (Grant No. 2016YFB0400601).

摘要/Abstract

摘要：

GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm² for 500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm². Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons:one is the increase of Shockley-Rrad-Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

关键词: GaN-based, yellow LED, aging mechanisms, V-pits

Abstract:

Key words: GaN-based, yellow LED, aging mechanisms, V-pits

中图分类号: (III-V semiconductors)

73.61.Ey

78.60.Fi (Electroluminescence) 73.21.Fg (Quantum wells) 73.21.Cd (Superlattices)

张天然, 方芳, 王小兰, 张建立, 吴小明, 潘栓, 刘军林, 江风益. Aging mechanism of GaN-based yellow LEDs with V-pits[J]. 中国物理B, 2019, 28(6): 67305-067305.

Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益). Aging mechanism of GaN-based yellow LEDs with V-pits[J]. Chin. Phys. B, 2019, 28(6): 67305-067305.

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Aging mechanism of GaN-based yellow LEDs with V-pits

Aging mechanism of GaN-based yellow LEDs with V-pits

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