›› 2014, Vol. 23 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/23/8/087305
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
毛维a, 佘伟波a, 杨翠b, 张超a, 张进成a, 马晓华b, 张金风a, 刘红侠a, 杨林安a, 张凯a, 赵胜雷a, 陈永和a, 郑雪峰a, 郝跃a
Mao Wei (毛维)a, She Wei-Bo (佘伟波)a, Yang Cui (杨翠)b, Zhang Chao (张超)a, Zhang Jin-Cheng (张进成)a, Ma Xiao-Hua (马晓华)b, Zhang Jin-Feng (张金风)a, Liu Hong-Xia (刘红侠)a, Yang Lin-An (杨林安)a, Zhang Kai (张凯)a, Zhao Sheng-Lei (赵胜雷)a, Chen Yong-He (陈永和)a, Zheng Xue-Feng (郑雪峰)a, Hao Yue (郝跃)a
摘要: In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)