Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric

doi:10.1088/1674-1056/ab8895

中国物理B ›› 2020, Vol. 29 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/ab8895

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2020-02-26 修回日期:2020-04-01 出版日期:2020-06-05 发布日期:2020-06-05
通讯作者: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010128002 and 2020B010173001), the National Natural Science Foundation of China (Grant Nos. U1601210 and 61904207), the Natural Science Foundation of Guangdong Province of China (Grant No. 2015A030312011), and the China Postdoctoral Science Foundation (Grant No. 2019M663233).

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

Ya-Wen Zhao(赵亚文)¹, Liu-An Li(李柳暗)¹, Tao-Tao Que(阙陶陶)¹, Qiu-Ling Qiu(丘秋凌)¹, Liang He(何亮)², Zhen-Xing Liu(刘振兴)¹, Jin-Wei Zhang(张津玮)¹, Qian-Shu Wu(吴千树)¹, Jia Chen(陈佳)¹, Zhi-Sheng Wu(吴志盛)¹, Yang Liu(刘扬)¹

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Received:2020-02-26 Revised:2020-04-01 Online:2020-06-05 Published:2020-06-05
Contact: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010128002 and 2020B010173001), the National Natural Science Foundation of China (Grant Nos. U1601210 and 61904207), the Natural Science Foundation of Guangdong Province of China (Grant No. 2015A030312011), and the China Postdoctoral Science Foundation (Grant No. 2019M663233).

摘要/Abstract

摘要： We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown (TDDB). Under a high forward gate bias stress, newly increased traps generate both at the SiN_x/AlGaN interface and the SiN_x bulk, resulting in the voltage shift and the increase of the voltage hysteresis. When prolonging the stress duration, the defects density generated in the SiN_x dielectric becomes dominating, which drastically increases the gate leakage current and causes the catastrophic failure. After recovery by UV light illumination, the negative shift in threshold voltage (compared with the fresh one) confirms the accumulation of positive charge at the SiN_x/AlGaN interface and/or in SiN_x bulk, which is possibly ascribed to the broken bonds after long-term stress. These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.

关键词: GaN-based MIS-HEMTs, gate dielectric, time-dependent dielectric breakdown, interface states

Abstract: We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown (TDDB). Under a high forward gate bias stress, newly increased traps generate both at the SiN_x/AlGaN interface and the SiN_x bulk, resulting in the voltage shift and the increase of the voltage hysteresis. When prolonging the stress duration, the defects density generated in the SiN_x dielectric becomes dominating, which drastically increases the gate leakage current and causes the catastrophic failure. After recovery by UV light illumination, the negative shift in threshold voltage (compared with the fresh one) confirms the accumulation of positive charge at the SiN_x/AlGaN interface and/or in SiN_x bulk, which is possibly ascribed to the broken bonds after long-term stress. These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.

Key words: GaN-based MIS-HEMTs, gate dielectric, time-dependent dielectric breakdown, interface states

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

72.80.Sk (Insulators) 73.20.At (Surface states, band structure, electron density of states) 77.22.Jp (Dielectric breakdown and space-charge effects)

赵亚文, 李柳暗, 阙陶陶, 丘秋凌, 何亮, 刘振兴, 张津玮, 吴千树, 陈佳, 吴志盛, 刘扬. Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric[J]. 中国物理B, 2020, 29(6): 67203-067203.

Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬). Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric[J]. Chin. Phys. B, 2020, 29(6): 67203-067203.

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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

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