中国物理B ›› 2018, Vol. 27 ›› Issue (2): 28101-028101.doi: 10.1088/1674-1056/27/2/028101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Yao Xing(邢瑶), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Xiang Li(李翔), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同)   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China;
    6. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
  • 收稿日期:2017-08-16 修回日期:2017-10-23 出版日期:2018-02-05 发布日期:2018-02-05
  • 通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
  • 基金资助:
    Project supported by the Science Challenge Project, China (Grant No. Z2016003), the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Yao Xing(邢瑶)1,2, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Xiang Li(李翔)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ping Chen(陈平)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Feng Liang(梁锋)1, Shuang-Tao Liu(刘双韬)1, Li-Qun Zhang(张立群)4, Wen-Jie Wang(王文杰)5, Mo Li(李沫)5, Yuan-Tao Zhang(张源涛)6, Guo-Tong Du(杜国同)6   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China;
    6. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
  • Received:2017-08-16 Revised:2017-10-23 Online:2018-02-05 Published:2018-02-05
  • Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
  • About author:81.05.Ea; 81.07.St; 02.60.Cb; 42.50.-p
  • Supported by:
    Project supported by the Science Challenge Project, China (Grant No. Z2016003), the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

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摘要： In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/InxGa1-xN/GaN multiple-quantum-well (MQW) laser diode (LD), the Al composition of inserted p-type AlxGa1-xN electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type AlxGa1-xN hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of AlxGa1-xN HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of AlxGa1-xN HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.

关键词: GaN-based ultraviolet LD, electron and hole leakage

Abstract: In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/InxGa1-xN/GaN multiple-quantum-well (MQW) laser diode (LD), the Al composition of inserted p-type AlxGa1-xN electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type AlxGa1-xN hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of AlxGa1-xN HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of AlxGa1-xN HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.

Key words: GaN-based ultraviolet LD, electron and hole leakage

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.07.St (Quantum wells) 02.60.Cb (Numerical simulation; solution of equations) 42.50.-p (Quantum optics)