Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

doi:10.1088/1674-1056/24/2/027303

›› 2015, Vol. 24 ›› Issue (2): 27303-027303.doi: 10.1088/1674-1056/24/2/027303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment

宓珉瀚, 张凯, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2014-05-26 修回日期:2014-08-14 出版日期:2015-02-05 发布日期:2015-02-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment

Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2014-05-26 Revised:2014-08-14 Online:2015-02-05 Published:2015-02-05
Contact: Hao Yue E-mail:yhao@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

摘要/Abstract

摘要： The influence of an N₂O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g_m) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D_T) and time constant (τ_T) of the N₂O-treated device are smaller than those of a non-treated device. The results indicate that the N₂O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.

关键词: GaN-based HEMTs, N₂O plasma pre-pretreatment, frequency-dependent conductance

Abstract: The influence of an N₂O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g_m) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D_T) and time constant (τ_T) of the N₂O-treated device are smaller than those of a non-treated device. The results indicate that the N₂O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.

Key words: GaN-based HEMTs, N₂O plasma pre-pretreatment, frequency-dependent conductance

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 72.30.+q (High-frequency effects; plasma effects)

宓珉瀚, 张凯, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃. Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment[J]. , 2015, 24(2): 27303-027303.

Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment[J]. Chin. Phys. B, 2015, 24(2): 27303-027303.

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Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment

Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment

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