中国物理B ›› 2014, Vol. 23 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/23/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

蔡金鑫, 孙慧卿, 郑欢, 张盼君, 郭志友   

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2013-07-24 修回日期:2013-11-09 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60877069) and the Science and Technology Key Program of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

Cai Jin-Xin (蔡金鑫), Sun Hui-Qing (孙慧卿), Zheng Huan (郑欢), Zhang Pan-Jun (张盼君), Guo Zhi-You (郭志友)   

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2013-07-24 Revised:2013-11-09 Online:2014-05-15 Published:2014-05-15
  • Contact: Sun Hui-Qing E-mail:sunhq@scnu.edu.cn
  • About author:85.60.Jb; 78.60.Fi; 87.15.A-; 73.61.Ey
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60877069) and the Science and Technology Key Program of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

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摘要： GaN-based multiple quantum well light-emitting diodes (LEDs) with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one.

关键词: superlattice barrier, numerical simulation, hole injection, GaN-based LED

Abstract: GaN-based multiple quantum well light-emitting diodes (LEDs) with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one.

Key words: superlattice barrier, numerical simulation, hole injection, GaN-based LED

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.60.Fi (Electroluminescence) 87.15.A- (Theory, modeling, and computer simulation) 73.61.Ey (III-V semiconductors)