Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

doi:10.1088/1674-1056/26/1/017804

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 17804-017804.doi: 10.1088/1674-1056/26/1/017804

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

Hai-Juan Cui(崔海娟), Hong-Chun Yang(杨宏春), Jun Xu(徐军), Yu-Ming Yang(杨宇明), Zi-Xian Yang(杨子贤)

1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. School of Mathematical Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2016-08-29 修回日期:2016-10-17 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: Hai-Juan Cui E-mail:haijuan_cui@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 31470822) and the Advanced Research Foundation of China (Grant Nos. 9140A05030114DZ02068, 9140A07030514DZ02101, and 9140A07010715DZ02001).

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

Hai-Juan Cui(崔海娟)¹, Hong-Chun Yang(杨宏春)¹, Jun Xu(徐军)¹, Yu-Ming Yang(杨宇明)², Zi-Xian Yang(杨子贤)¹

1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. School of Mathematical Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2016-08-29 Revised:2016-10-17 Online:2017-01-05 Published:2017-01-05
Contact: Hai-Juan Cui E-mail:haijuan_cui@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 31470822) and the Advanced Research Foundation of China (Grant Nos. 9140A05030114DZ02068, 9140A07030514DZ02101, and 9140A07010715DZ02001).

摘要/Abstract

摘要： An experimental study of leakage current is presented in a semi-insulating (SI) GaAs photoconductive semiconductor switch (PCSS) with voltages up to 5.8 kV (average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5 A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, field-dependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-GaAs PCSS may give us an insight into its physical mechanism.

关键词: photoconductive semiconductor switch, leakage current, dark resistance, nonlinear characteristics

Abstract: An experimental study of leakage current is presented in a semi-insulating (SI) GaAs photoconductive semiconductor switch (PCSS) with voltages up to 5.8 kV (average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5 A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, field-dependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-GaAs PCSS may give us an insight into its physical mechanism.

Key words: photoconductive semiconductor switch, leakage current, dark resistance, nonlinear characteristics

中图分类号: (Photoconduction and photovoltaic effects)

78.56.-a

78.30.Fs (III-V and II-VI semiconductors) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species)

崔海娟, 杨宏春, 徐军, 杨宇明, 杨子贤. Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch[J]. 中国物理B, 2017, 26(1): 17804-017804.

Hai-Juan Cui(崔海娟), Hong-Chun Yang(杨宏春), Jun Xu(徐军), Yu-Ming Yang(杨宇明), Zi-Xian Yang(杨子贤). Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch[J]. Chin. Phys. B, 2017, 26(1): 17804-017804.

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Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

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