中国物理B ›› 2017, Vol. 26 ›› Issue (2): 27105-027105.doi: 10.1088/1674-1056/26/2/027105
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋)
- Department of Materials Physics, School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋)
- Department of Materials Physics, School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
摘要： In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current-voltage (I-V-T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to -150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer. A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I-V curves is obtained.
中图分类号: (III-V semiconductors)
- 71.55.Eq