中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/24/7/077201
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
翟东媛a b, 朱俊b, 赵毅a c, 蔡银飞d, 施毅b, 郑有炓b
Zhai Dong-Yuan (翟东媛)a b, Zhu Jun (朱俊)b, Zhao Yi (赵毅)a c, Cai Yin-Fei (蔡银飞)d, Shi Yi (施毅)b, Zheng You-Liao (郑有炓)b
摘要:
A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
中图分类号: (Conductivity phenomena in semiconductors and insulators)