Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

doi:10.1088/1674-1056/24/4/044209

中国物理B ›› 2015, Vol. 24 ›› Issue (4): 44209-044209.doi: 10.1088/1674-1056/24/4/044209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

周天宇^{a b}, 刘学超^a, 黄维^a, 代冲冲^{a b}, 郑燕青^a, 施尔畏^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2014-08-21 修回日期:2014-10-04 出版日期:2015-04-05 发布日期:2015-04-05
基金资助:
Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

Zhou Tian-Yu (周天宇)^{a b}, Liu Xue-Chao (刘学超)^a, Huang Wei (黄维)^a, Dai Chong-Chong (代冲冲)^{a b}, Zheng Yan-Qing (郑燕青)^a, Shi Er-Wei (施尔畏)^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China

Received:2014-08-21 Revised:2014-10-04 Online:2015-04-05 Published:2015-04-05
Contact: Liu Xue-Chao E-mail:xcliu@mail.sic.ac.cn
Supported by:
Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

摘要/Abstract

摘要：

Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n⁺-AZO subcontact layer is 14.7% lower than that of PCSS without an n⁺-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

关键词: photoconductive semiconductor switch, SiC, n⁺-AZO subcontact layer, on-state resistance

Abstract:

Key words: photoconductive semiconductor switch, SiC, n⁺-AZO subcontact layer, on-state resistance

中图分类号: (Optical computers, logic elements, interconnects, switches; neural networks)

42.79.Ta

42.70.-a (Optical materials) 42.79.-e (Optical elements, devices, and systems)

周天宇, 刘学超, 黄维, 代冲冲, 郑燕青, 施尔畏. Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches[J]. 中国物理B, 2015, 24(4): 44209-044209.

Zhou Tian-Yu (周天宇), Liu Xue-Chao (刘学超), Huang Wei (黄维), Dai Chong-Chong (代冲冲), Zheng Yan-Qing (郑燕青), Shi Er-Wei (施尔畏). Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches[J]. Chin. Phys. B, 2015, 24(4): 44209-044209.

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Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

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