Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

doi:10.1088/1674-1056/ab4e7e

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 127703-127703.doi: 10.1088/1674-1056/ab4e7e

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平)

1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Shenzhen Institute of Information Technology, Shenzhen 518172, China

收稿日期:2019-07-05 修回日期:2019-09-24 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Jing-Ping Xu E-mail:jpxu@hust.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112).

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

Lin Zhou(周琳)¹, Lu Liu(刘璐)¹, Yu-Heng Deng(邓煜恒)¹, Chun-Xia Li(李春霞)², Jing-Ping Xu(徐静平)¹

1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Shenzhen Institute of Information Technology, Shenzhen 518172, China

Received:2019-07-05 Revised:2019-09-24 Online:2019-12-05 Published:2019-12-05
Contact: Jing-Ping Xu E-mail:jpxu@hust.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112).

摘要/Abstract

摘要： High-quality dielectric/Ge interface and low gate leakage current are crucial issues for high-performance nanoscaled Ge-based complementary metal-oxide-semiconductor (CMOS) device. In this paper, the interfacial and electrical properties of high-k HfGdON/LaTaON stacked gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different gadolinium (Gd) contents are investigated. Experimental results show that when the controlling Gd content is a suitable value (e.g.,~13.16%), excellent device performances can be achieved:low interface-state density (6.93×10¹¹ cm^-2·eV^-1), small flatband voltage (0.25 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.29×10^-6 A/cm² at V_g=V_fb + 1 V). These could be attributed to the repair of oxygen vacancies, the increase of conduction band offset, and the suppression of germanate and suboxide GeO_x at/near the high k/Ge interface by doping suitable Gd into HfON.

关键词: Ge MOS devices, HfGdON dielectric, interface quality, leakage current density

Abstract: High-quality dielectric/Ge interface and low gate leakage current are crucial issues for high-performance nanoscaled Ge-based complementary metal-oxide-semiconductor (CMOS) device. In this paper, the interfacial and electrical properties of high-k HfGdON/LaTaON stacked gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different gadolinium (Gd) contents are investigated. Experimental results show that when the controlling Gd content is a suitable value (e.g.,~13.16%), excellent device performances can be achieved:low interface-state density (6.93×10¹¹ cm^-2·eV^-1), small flatband voltage (0.25 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.29×10^-6 A/cm² at V_g=V_fb + 1 V). These could be attributed to the repair of oxygen vacancies, the increase of conduction band offset, and the suppression of germanate and suboxide GeO_x at/near the high k/Ge interface by doping suitable Gd into HfON.

Key words: Ge MOS devices, HfGdON dielectric, interface quality, leakage current density

中图分类号:

77.55.D-

77.55.dj (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

周琳, 刘璐, 邓煜恒, 李春霞, 徐静平. Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content[J]. 中国物理B, 2019, 28(12): 127703-127703.

Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平). Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content[J]. Chin. Phys. B, 2019, 28(12): 127703-127703.

参考文献 39

[34]	Li X F, Liu X J, Cao Y Q, Li A D, Li H and Wu D 2013 Appl. Surf. Sci. 264 783 doi: 10.1016/j.apsusc.2012.10.127
[1]	Chi On C, Kim H, Chi D, McIntyre P C and Saraswat K C 2006 IEEE T. Electron Dev. 53 1509 doi: 10.1109/TED.2006.875812
[35]	Jiang S S, He G, Fang Z B, Wang P H, Liu Y M, Lv J G and Liu M 2018 J. Alloys Compd. 757 288 doi: 10.1016/j.jallcom.2018.05.091
[2]	Kamata Y 2019 J. Mater. Chem. C 7 2823 doi: 10.1039/C9TC00017H
[36]	Joshi P C, Krupanidhi S B and Mansingh A 1992 J. Appl. Phys. 72 5517 doi: 10.1063/1.351949
[37]	Rahman M S and Evangelou E K 2011 IEEE T. Electron Dev. 58 3549 doi: 10.1109/TED.2011.2162095
[3]	Chen D, Liu Z, Lu X, Wan L, Li R, Yang Z and Li G 2019 J. Mater. Chem. C 7 2823 doi: 10.1039/C9TC00017H
[38]	Xu J P, Lai P T, Li C X, Zou X and Chan C L 2006 IEEE Electron Dev. Lett. 27 439 doi: 10.1109/LED.2006.874124
[4]	Chen D, Wan L, Li J, Liu Z and Li G 2019 Solid State Electron. 151 60 doi: 10.1016/j.sse.2018.10.012
[39]	Terman L M 1962 Solid-State Electron. 5 285 doi: 10.1016/0038-1101(62)90111-9
[5]	Kong X T, Zhou X L, Li S Y, Qiao L J, Liu H G, Wang W and Pan J Q 2015 Chin. Phys. Lett. 32 037301 doi: 10.1088/0256-307X/32/3/037301
[6]	Zhang T, Pu T, Xie T, Li L, Bu Y, Wang X and Ao J P 2018 Chin. Phys. B 27 078503 doi: 10.1088/1674-1056/27/7/078503
[7]	Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A and Van Elshocht S 2008 Appl. Surf. Sci. 254 6094 doi: 10.1016/j.apsusc.2008.02.134
[8]	Feng J, Jing-Ping X, Yong H, Lu L and Lai P T 2014 IEEE T. Electron Dev. 61 3608 doi: 10.1109/TED.2014.2356597
[9]	Yuan W, Xu J, Liu L, Huang Y and Cheng Z 2016 Semiconductors + 37 054004 doi: 10.1088/1674-4926/37/5/054004
[10]	Huang Y, Xu J P, Liu L, Lai P T and Tang W M 2016 Appl. Phys. Lett. 109 193504 doi: 10.1063/1.4967186
[11]	Chui C O, Ito F and Saraswat K C 2004 IEEE T. Electron Dev. 25 613 doi: 10.1109/LED.2004.833830
[12]	Gao F, Lee S J, Pan J S, Tang L J and Kwong D L 2005 Appl. Phys. Lett. 86 113501 doi: 10.1063/1.1875733
[13]	Kim K H, Gordon R G, Ritenour A and Antoniadis D A 2007 Appl. Phys. Lett. 90 212104 doi: 10.1063/1.2741609
[14]	Li C X and Lai P T 2009 Appl. Phys. Lett. 95 022910 doi: 10.1063/1.3182741
[15]	Cockayne E 2008 J. Appl. Phys. 103 084103 doi: 10.1063/1.2903870
[16]	Zhu H, Tang C, Fonseca L R C and Ramprasad R 2012 J. Mater. Sci. 47 7399 doi: 10.1007/s10853-012-6568-y
[17]	Xu H X, Xu J P, Li C X and Lai P T 2010 Appl. Phys. Lett. 97 022903 doi: 10.1063/1.3462301
[18]	Lin M H, Lan C K, Chen C C and Wu J Y 2011 Appl. Phys. Lett. 99 182105 doi: 10.1063/1.3658397
[19]	Sayan S, Nguyen N V, Ehrstein J, Chambers J J, Visokay M R, Quevedo-Lopez M A, Colombo L, Yoder D, Levin I, Fischer D A, Paunescu M, Celik O and Garfunkel E 2005 Appl. Phys. Lett. 87 212905 doi: 10.1063/1.2135390
[20]	Wang L G, Xiong Y, Xiao W, Cheng L, Du J, Tu H and van de Walle A 2014 Appl. Phys. Lett. 104 201903 doi: 10.1063/1.4878401
[21]	Huang X D, Sin J K O and Lai P T 2012 IEEE T. Device Mater. Rel. 12 306 doi: 10.1109/TDMR.2011.2182197
[22]	Chun W J, Ishikawa A, Fujisawa H, Takata T, Kondo J N, Hara M, Kawai M, Matsumoto Y and Domen K 2009 Mater. Charact. 60 138 doi: 10.1016/j.matchar.2008.08.002
[23]	Uwamino Y, Ishizuka T and Yamatera H 1984 J. Electron. Spectrosc. 34 67 doi: 10.1016/0368-2048(84)80060-2
[24]	Datta P, Majewski P and Aldinger F 2009 Mater. Charact. 60 138 doi: 10.1016/j.matchar.2008.08.002
[25]	Dai J Y, Lee P F, Wong K H, Chan H L W and Choy C L 2003 J. Appl. Phys. 94 912 doi: 10.1063/1.1585116
[26]	Yamamoto K, Hayashi S, Niwa M, Asai M, Horii S and Miya H 2003 Appl. Phys. Lett. 83 2229 doi: 10.1063/1.1609246
[27]	Sahiner M A, Woicik J C, Gao P, McKeown P, Croft M C, Gartman M and Benapfla B 2007 Thin Solid Films 515 6548 doi: 10.1016/j.tsf.2006.11.171
[28]	Xiong Y, Tu H, Du J, Ji M, Zhang X and Wang L 2010 Appl. Phys. Lett. 97 012901 doi: 10.1063/1.3460277
[29]	Losovyj Y B, Ketsman I, Sokolov A, Belashchenko K D, Dowben P A, Tang J and Wang Z 2007 Appl. Phys. Lett. 91 132908 doi: 10.1063/1.2787967
[30]	Ketsman I, Losovyj Y B, Sokolov A, Tang J, Wang Z, Belashchenko K D and Dowben P A 2007 Appl. Phys. A 89 489
[31]	Lee J J, Shin Y, Choi J, Kim H, Hyun S, Choi S, Cho B J and Lee S H 2012 Phys. Status Solid-R 6 439 doi: 10.1002/pssr.201206315
[32]	Prabhakaran K and Ogino T 1995 Surf. Sci. 325 263 doi: 10.1016/0039-6028(94)00746-2
[33]	Glorieux B, Berjoan R, Matecki M, Kammouni A and Perarnau D 2007 Appl. Surf. Sci. 253 3349 doi: 10.1016/j.apsusc.2006.07.027
[34]	Li X F, Liu X J, Cao Y Q, Li A D, Li H and Wu D 2013 Appl. Surf. Sci. 264 783 doi: 10.1016/j.apsusc.2012.10.127
[35]	Jiang S S, He G, Fang Z B, Wang P H, Liu Y M, Lv J G and Liu M 2018 J. Alloys Compd. 757 288 doi: 10.1016/j.jallcom.2018.05.091
[36]	Joshi P C, Krupanidhi S B and Mansingh A 1992 J. Appl. Phys. 72 5517 doi: 10.1063/1.351949
[37]	Rahman M S and Evangelou E K 2011 IEEE T. Electron Dev. 58 3549 doi: 10.1109/TED.2011.2162095
[38]	Xu J P, Lai P T, Li C X, Zou X and Chan C L 2006 IEEE Electron Dev. Lett. 27 439 doi: 10.1109/LED.2006.874124
[39]	Terman L M 1962 Solid-State Electron. 5 285 doi: 10.1016/0038-1101(62)90111-9

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 39

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	张彤, 蒲涛飞, 谢天, 李柳暗, 补钰煜, 王霄, 敖金平. Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2018, 27(7): 78503-078503.
[2]	王艳蓉, 杨红, 徐昊, 罗维春, 祁路伟, 张淑祥, 王文武, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process[J]. 中国物理B, 2017, 26(8): 87304-087304.
[3]	樊继斌, 程晓姣, 刘红侠, 王树龙, 段理. Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy[J]. 中国物理B, 2017, 26(8): 87701-087701.
[4]	樊继斌, 刘红侠, 段理, 张研, 于晓晨. Influences of different oxidants on characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition[J]. 中国物理B, 2017, 26(6): 67701-067701.
[5]	樊继斌, 刘红侠, 孙斌, 段理, 于晓晨. Performance and reliability improvement of La₂O₃/Al₂O₃ nanolaminates using ultraviolet ozone post treatment[J]. 中国物理B, 2017, 26(5): 57702-057702.
[6]	马雪丽, 杨红, 项金娟, 王晓磊, 王文武, 张建齐, 殷华湘, 朱慧珑, 赵超. Crystallization behaviors of ultrathin Al-doped HfO₂ amorphous films grown by atomic layer deposition[J]. 中国物理B, 2017, 26(2): 27701-027701.
[7]	张满红. Electron trapping properties at HfO₂/SiO₂ interface, studied by Kelvin probe force microscopy and theoretical analysis[J]. 中国物理B, 2016, 25(8): 87701-087701.
[8]	侯晓慧, 郑雪峰, 王奥琛, 王颖哲, 文浩宇, 刘志镜, 李小炜, 吴银河. Distribution of electron traps in SiO₂/HfO₂ nMOSFET[J]. 中国物理B, 2016, 25(5): 57702-057702.
[9]	费晨曦, 刘红侠, 汪星, 赵冬冬, 王树龙, 陈树鹏. Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition[J]. 中国物理B, 2016, 25(5): 58106-058106.
[10]	樊继斌, 丁晓甫, 刘红侠, 谢鹏飞, 张袁涛, 廖清良. Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method[J]. 中国物理B, 2016, 25(2): 27702-027702.
[11]	王艳蓉, 杨红, 徐昊, 王晓磊, 罗维春, 祁路伟, 张淑祥, 王文武, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process[J]. 中国物理B, 2015, 24(11): 117306-117306.
[12]	刘新宇, 王弋宇, 彭朝阳, 李诚瞻, 吴佳, 白云, 汤益丹, 刘可安, 申华军. Charge trapping behavior and its origin in Al₂O₃/SiC MIS system[J]. 中国物理B, 2015, 24(8): 87304-087304.
[13]	任尚清, 杨红, 王文武, 唐波, 唐兆云, 王晓磊, 徐昊, 罗维春, 赵超, 闫江, 陈大鹏, 叶甜春. Energy distribution extraction of negative charges responsible for positive bias temperature instability[J]. 中国物理B, 2015, 24(7): 77304-077304.
[14]	韩锴, 王晓磊, 徐永贵, 杨红, 王文武. Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack[J]. , 2014, 23(11): 117702-117702.
[15]	林猛, 安霞, 黎明, 云全新, 李敏, 李志强, 刘朋强, 张兴, 黄如. Fabricating GeO₂ passivation layer by N₂O plasma oxidation for Ge NMOSFETs application[J]. 中国物理B, 2014, 23(6): 67701-067701.