Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base

doi:10.1088/1674-1056/24/6/068502

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/24/6/068502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base

元磊^a, 张玉明^a, 宋庆文^{a b}, 汤晓燕^a, 张义门^a

a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2014-12-01 修回日期:2014-12-30 出版日期:2015-06-05 发布日期:2015-06-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876061 and 61234006), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JQ8012), and the Doctoral Fund of the Ministry of Education of China (Grant Nos. 20130203120017 and 20110203110010).

Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base

Yuan Lei (元磊)^a, Zhang Yu-Ming (张玉明)^a, Song Qing-Wen (宋庆文)^{a b}, Tang Xiao-Yan (汤晓燕)^a, Zhang Yi-Men (张义门)^a

a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2014-12-01 Revised:2014-12-30 Online:2015-06-05 Published:2015-06-05
Contact: Song Qing-Wen E-mail:qwsong@xidian.edu.cn
About author:85.30.Pq; 85.30.De; 81.15.-z
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876061 and 61234006), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JQ8012), and the Doctoral Fund of the Ministry of Education of China (Grant Nos. 20130203120017 and 20110203110010).

摘要/Abstract

摘要： The non-ideal effect of 4H–SiC bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO₂, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly-doped base epilayer, the 4H–BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability.

关键词: 4H-SiC BJT, double base, early voltage, emitter current crowding

Abstract: The non-ideal effect of 4H–SiC bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO₂, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly-doped base epilayer, the 4H–BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability.

Key words: 4H-SiC BJT, double base, early voltage, emitter current crowding

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

元磊, 张玉明, 宋庆文, 汤晓燕, 张义门. Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base[J]. 中国物理B, 2015, 24(6): 68502-068502.

Yuan Lei (元磊), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门). Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base[J]. Chin. Phys. B, 2015, 24(6): 68502-068502.

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Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base

Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base

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