中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68503-068503.doi: 10.1088/1674-1056/24/6/068503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

柳铭岗, 杨亿斌, 向鹏, 陈伟杰, 韩小标, 林秀其, 林佳利, 罗慧, 廖强, 臧文杰, 吴志盛, 刘扬, 张佰君   

  1. School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2014-12-05 修回日期:2015-01-14 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君)   

  1. School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2014-12-05 Revised:2015-01-14 Online:2015-06-05 Published:2015-06-05
  • Contact: Zhang Bai-Jun E-mail:zhbaij@mail.sysu.edu.cn
  • About author:85.60.Jb; 62.40.+i; 61.72.-y
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

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摘要：

The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and AlGaN insertion layers (IL) respectively before the growth of MQWs in metal–organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. AlGaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with AlGaN IL were observed in the light images of the LEDs.

关键词: GaN/InGaN, LEDs, stress, indium composition

Abstract:

The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and AlGaN insertion layers (IL) respectively before the growth of MQWs in metal–organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. AlGaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with AlGaN IL were observed in the light images of the LEDs.

Key words: GaN/InGaN, LEDs, stress, indium composition

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
62.40.+i (Anelasticity, internal friction, stress relaxation, and mechanical resonances) 61.72.-y (Defects and impurities in crystals; microstructure)