A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

doi:10.1088/1674-1056/23/11/118505

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118505-118505.doi: 10.1088/1674-1056/23/11/118505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Shweta Tripathi

Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India

收稿日期:2014-02-19 修回日期:2014-04-24 出版日期:2014-11-15 发布日期:2014-11-15

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Shweta Tripathi

Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India

Received:2014-02-19 Revised:2014-04-24 Online:2014-11-15 Published:2014-11-15
Contact: Shweta Tripathi E-mail:shtri@mnnit.ac.in

摘要/Abstract

摘要：

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLAS^TM 2D device simulator.

关键词: dual-material-gate MOSFET, lightly doped drain, short channel effect, threshold voltage

Abstract:

Key words: dual-material-gate MOSFET, lightly doped drain, short channel effect, threshold voltage

中图分类号: (Field effect devices)

85.30.Tv

85.30.-z (Semiconductor devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 12.39.Pn (Potential models)

Shweta Tripathi. A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET[J]. 中国物理B, 2014, 23(11): 118505-118505.

Shweta Tripathi. A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET[J]. Chin. Phys. B, 2014, 23(11): 118505-118505.

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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

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