中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118506-118506.doi: 10.1088/1674-1056/23/11/118506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack

云全新, 黎明, 安霞, 林猛, 刘朋强, 李志强, 张冰馨, 夏宇轩, 张浩, 张兴, 黄如, 王阳元   

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2014-03-30 修回日期:2014-04-21 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035-001), and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack

Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元)   

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2014-03-30 Revised:2014-04-21 Online:2014-11-15 Published:2014-11-15
  • Contact: Li Ming E-mail:liming.ime@pku.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035-001), and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

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摘要：

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs). By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is (110) > (111) ～ (100), and the best channel direction is (110)/[110]. Moreover, the (110) device performance was found to be easily degraded as the channel direction got off from the [110] orientation, while (100) and (111) devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.

关键词: germanium, metal-oxide-semiconductor field-effect transistor, orientation

Abstract:

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs). By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is (110) > (111) ～ (100), and the best channel direction is (110)/[110]. Moreover, the (110) device performance was found to be easily degraded as the channel direction got off from the [110] orientation, while (100) and (111) devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.

Key words: germanium, metal-oxide-semiconductor field-effect transistor, orientation

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling) 61.72.uf (Ge and Si) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)