中国物理B ›› 2021, Vol. 30 ›› Issue (11): 117102-117102.doi: 10.1088/1674-1056/abeee0

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Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application

Hai-Qing Xie(谢海情)1, Dan Wu(伍丹)1, Xiao-Qing Deng(邓小清)1, Zhi-Qiang Fan(范志强)1,†, Wu-Xing Zhou(周五星)2, Chang-Qing Xiang(向长青)3, and Yue-Yang Liu(刘岳阳)4   

  1. 1 Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
    2 School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China;
    3 College of Information Science and Engineering, Jishou University, Jishou 416000, China;
    4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2021-02-28 修回日期:2021-03-14 接受日期:2021-03-16 出版日期:2021-10-13 发布日期:2021-10-13
  • 通讯作者: Zhi-Qiang Fan E-mail:zqfan@csust.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12074046 and 12074115), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2020JJ4597, 2021JJ40558, and 2021JJ30733), the Scientific Research Fund of Hunan Provincial Education Department, China (Grant Nos. 20K007 and 20C0039), and the Key Projects of Changsha Science and Technology Plan (Grant No. kq1901102).

Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application

Hai-Qing Xie(谢海情)1, Dan Wu(伍丹)1, Xiao-Qing Deng(邓小清)1, Zhi-Qiang Fan(范志强)1,†, Wu-Xing Zhou(周五星)2, Chang-Qing Xiang(向长青)3, and Yue-Yang Liu(刘岳阳)4   

  1. 1 Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
    2 School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China;
    3 College of Information Science and Engineering, Jishou University, Jishou 416000, China;
    4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2021-02-28 Revised:2021-03-14 Accepted:2021-03-16 Online:2021-10-13 Published:2021-10-13
  • Contact: Zhi-Qiang Fan E-mail:zqfan@csust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12074046 and 12074115), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2020JJ4597, 2021JJ40558, and 2021JJ30733), the Scientific Research Fund of Hunan Provincial Education Department, China (Grant Nos. 20K007 and 20C0039), and the Key Projects of Changsha Science and Technology Plan (Grant No. kq1901102).

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摘要： We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future.

关键词: Schottky-barrier field effect transistor, SiC, band structure, short channel effect

Abstract: We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future.

Key words: Schottky-barrier field effect transistor, SiC, band structure, short channel effect

中图分类号:  (Density functional theory, local density approximation, gradient and other corrections)

  • 71.15.Mb
73.20.-r (Electron states at surfaces and interfaces) 73.63.-b (Electronic transport in nanoscale materials and structures) 73.40.-c (Electronic transport in interface structures)