A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

doi:10.1088/1674-1056/22/7/077309

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77309-077309.doi: 10.1088/1674-1056/22/7/077309

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

付强, 张波, 罗小蓉, 李肇基

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2013-01-18 修回日期:2013-02-27 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 2009ZX02305-006) and the National Natural Science Foundation of China (Grant No. 61076082).

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2013-01-18 Revised:2013-02-27 Online:2013-06-01 Published:2013-06-01
Contact: Fu Qiang E-mail:fuqiang17@gmail.com
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 2009ZX02305-006) and the National Natural Science Foundation of China (Grant No. 61076082).

摘要/Abstract

摘要： In this paper, a novel dual-gate & dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure which features the double extended trench gate and dielectric-inserted in the drift region is proposed and discussed. The device can not only decrease the specific on-resistance R_on,sp but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm^-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R_on,sp of 187 mΩ·mm², and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.

关键词: lateral trench insulated gate bipolar transistor, specific on-resistance, positive temperature coefficient, turnoff characteristic

Abstract: In this paper, a novel dual-gate & dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure which features the double extended trench gate and dielectric-inserted in the drift region is proposed and discussed. The device can not only decrease the specific on-resistance R_on,sp but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm^-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R_on,sp of 187 mΩ·mm², and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.

Key words: lateral trench insulated gate bipolar transistor, specific on-resistance, positive temperature coefficient, turnoff characteristic

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Pq (Bipolar transistors)

付强, 张波, 罗小蓉, 李肇基. A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate[J]. 中国物理B, 2013, 22(7): 77309-077309.

Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基). A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate[J]. Chin. Phys. B, 2013, 22(7): 77309-077309.

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A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

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