Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

doi:10.1088/1674-1056/22/7/077308

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77308-077308.doi: 10.1088/1674-1056/22/7/077308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

王颖, 杨汀, 谢吉鹏, 吕文理, 范国莹, 刘肃

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

收稿日期:2012-10-21 修回日期:2013-01-22 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10974074).

Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

Wang Ying (王颖), Yang Ting (杨汀), Xie Ji-Peng (谢吉鹏), Lü Wen-Li (吕文理), Fan Guo-Ying (范国莹), Liu Su (刘肃)

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Received:2012-10-21 Revised:2013-01-22 Online:2013-06-01 Published:2013-06-01
Contact: Liu Su E-mail:liusu@lzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10974074).

摘要/Abstract

摘要： Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide (ITO)/bis(8-hydroxyquinoline) cadmium (Cdq₂)/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, which was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.

关键词: resistive switching, memory, aggregation, bis(8-hydroxyquinoline) cadmium

Abstract: Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide (ITO)/bis(8-hydroxyquinoline) cadmium (Cdq₂)/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, which was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.

Key words: resistive switching, memory, aggregation, bis(8-hydroxyquinoline) cadmium

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 73.61.Ph (Polymers; organic compounds) 85.65.+h (Molecular electronic devices)

王颖, 杨汀, 谢吉鹏, 吕文理, 范国莹, 刘肃. Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application[J]. 中国物理B, 2013, 22(7): 77308-077308.

Wang Ying (王颖), Yang Ting (杨汀), Xie Ji-Peng (谢吉鹏), Lü Wen-Li (吕文理), Fan Guo-Ying (范国莹), Liu Su (刘肃). Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application[J]. Chin. Phys. B, 2013, 22(7): 77308-077308.

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Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

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