Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

doi:10.1088/1674-1056/22/10/108501

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/22/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

伍青青^{a b}, 陈静^a, 罗杰馨^a, 吕凯^{a b}, 余涛^a, 柴展^a, 王曦^a

a State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200250, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2012-12-17 修回日期:2013-04-22 出版日期:2013-08-30 发布日期:2013-08-30

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Wu Qing-Qing (伍青青)^{a b}, Chen Jing (陈静)^a, Luo Jie-Xin (罗杰馨)^a, Lü Kai (吕凯)^{a b}, Yu Tao (余涛)^a, Chai Zhan (柴展)^a, Wang Xi (王曦)^a

a State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200250, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2012-12-17 Revised:2013-04-22 Online:2013-08-30 Published:2013-08-30
Contact: Chen Jing E-mail:jchen@mail.sim.ac.cn

摘要/Abstract

摘要： A gate-to-body tunneling current model for silicon-on-insulator (SOI) devices is simulated. As verified by the measured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model.

关键词: gate-to-body tunneling, gate-induced floating body effect, image force-induced barrier low effect, silicon-on-insulator

Abstract: A gate-to-body tunneling current model for silicon-on-insulator (SOI) devices is simulated. As verified by the measured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model.

Key words: gate-to-body tunneling, gate-induced floating body effect, image force-induced barrier low effect, silicon-on-insulator

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

伍青青, 陈静, 罗杰馨, 吕凯, 余涛, 柴展, 王曦. Gate-to-body tunneling current model for silicon-on-insulator MOSFETs[J]. 中国物理B, 2013, 22(10): 108501-108501.

Wu Qing-Qing (伍青青), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), Lü Kai (吕凯), Yu Tao (余涛), Chai Zhan (柴展), Wang Xi (王曦). Gate-to-body tunneling current model for silicon-on-insulator MOSFETs[J]. Chin. Phys. B, 2013, 22(10): 108501-108501.

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Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

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