中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108402-108402.doi: 10.1088/1674-1056/22/10/108402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The design and numerical analysis of tandem thermophotovoltaic cells

杨皓宇, 刘仁俊, 王连锴, 吕游, 李天天, 李国兴, 张源涛, 张宝林   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 收稿日期:2013-05-04 修回日期:2013-06-06 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the Project of State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2012ZZ13).

The design and numerical analysis of tandem thermophotovoltaic cells

Yang Hao-Yu (杨皓宇), Liu Ren-Jun (刘仁俊), Wang Lian-Kai (王连锴), Lü You (吕游), Li Tian-Tian (李天天), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林)   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2013-05-04 Revised:2013-06-06 Online:2013-08-30 Published:2013-08-30
  • Contact: Zhang Yuan-Tao, Zhang Bao-Lin E-mail:zhangyt@jlu.edu.cn;zbl@jlu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the Project of State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2012ZZ13).

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摘要： In this paper, numerical analysis of GaSb (Eg=0.72 eV)/Ga0.84In0.16As0.14Sb0.86 (Eg=0.53 eV) tandem thermophotovoltaic (TPV) cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GaInAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single-and dual-junction TPV cells, including I-V characteristic, maximum output power (Pmax), open-circuit voltage (Voc), short-circuit current (Isc), etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GaInAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.

关键词: numerical simulation, GaSb-based compounds, tandem thermophotovoltaic cell, maximum output power

Abstract: In this paper, numerical analysis of GaSb (Eg=0.72 eV)/Ga0.84In0.16As0.14Sb0.86 (Eg=0.53 eV) tandem thermophotovoltaic (TPV) cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p–n homojunction is used for the top cell and a GaInAsSb p–n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single-and dual-junction TPV cells, including I–V characteristic, maximum output power (Pmax), open-circuit voltage (Voc), short-circuit current (Isc), etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GaInAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.

Key words: numerical simulation, GaSb-based compounds, tandem thermophotovoltaic cell, maximum output power

中图分类号:  (Photoelectric conversion)

  • 84.60.Jt
02.60.-x (Numerical approximation and analysis) 85.60.Bt (Optoelectronic device characterization, design, and modeling) 71.55.Eq (III-V semiconductors)