中国物理B ›› 2012, Vol. 21 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/21/7/078503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

陈超, 田本朗, 刘兴钊, 戴丽萍, 邓新武, 陈远富   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-12-17 修回日期:2012-01-21 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 50932002).

The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 )   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2011-12-17 Revised:2012-01-21 Online:2012-06-01 Published:2012-06-01
  • Contact: Liu Xing-Zhao E-mail:xzliu@uestc.edu.cn
  • Supported by:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 50932002).

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摘要： The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electronmobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.

关键词: AlGaN/GaN, enhancement-mode high-electron-mobility transistors, 60Co γ-ray irradiation

Abstract: The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electronmobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.

Key words: AlGaN/GaN, enhancement-mode high-electron-mobility transistors, 60Co γ-ray irradiation

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices)