InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

doi:10.1088/1674-1056/21/2/028102

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 28102-028102.doi: 10.1088/1674-1056/21/2/028102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

李新坤,梁德春,金鹏,安琪,魏恒,吴剑,王占国

收稿日期:2011-09-19 修回日期:2011-10-19 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 金鹏,pengjin@semi.ac.cn E-mail:pengjin@semi.ac.cn

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

Li Xin-Kun(李新坤), Liang De-Chun(梁德春), Jin Peng(金鹏)^†, An Qi(安琪), Wei Heng(魏恒), Wu Jian(吴剑), and Wang Zhan-Guo(王占国)

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-09-19 Revised:2011-10-19 Online:2012-01-30 Published:2012-01-30
Contact: Jin Peng,pengjin@semi.ac.cn E-mail:pengjin@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037).

摘要/Abstract

Abstract: According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

Key words: quantum dot, submonolayer, self-assembled, superluminescent diode

中图分类号: (Quantum dots)

81.07.Ta

81.16.Dn (Self-assembly) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.60.Jb (Light-emitting devices)

李新坤,梁德春,金鹏,安琪,魏恒,吴剑,王占国. [J]. 中国物理B, 2012, 21(2): 28102-028102.

Li Xin-Kun(李新坤), Liang De-Chun(梁德春), Jin Peng(金鹏), An Qi(安琪), Wei Heng(魏恒), Wu Jian(吴剑), and Wang Zhan-Guo(王占国) . InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm[J]. Chin. Phys. B, 2012, 21(2): 28102-028102.

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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

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