中国物理B ›› 2012, Vol. 21 ›› Issue (1): 15203-015203.doi: 10.1088/1674-1056/21/1/015203
张海龙, 刘丰珍, 朱美芳, 刘金龙
Zhang Hai-Long(张海龙), Liu Feng-Zhen(刘丰珍)†, Zhu Mei-Fang(朱美芳), and Liu Jin-Long(刘金龙)
摘要: The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH4 to H2 (RH). For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH* (IHα/ISiH*) at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH* values are realized. By optimizing the RH modulation, a uniform crystallinity along the growth direction and a denser μ c-Si:H film can be obtained. However, an excessively high IHα/ISiH* may damage the interface properties, which is indicated by capacitance-voltage (C-V) measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.
中图分类号: (High-frequency and RF discharges)