中国物理B ›› 2011, Vol. 20 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/20/9/098503
肖国伟1, 周玉刚1, 卢太平2, 李述体2, 张康2, 刘超2, 郑树文2, 尹以安2, 仵乐娟2, 王海龙2, 杨孝东2
Lu Tai-Ping(卢太平) a), Li Shu-Ti(李述体)a), Zhang Kang(张康)a), Liu Chao(刘超)a), Xiao Guo-Wei(肖国伟)b), Zhou Yu-Gang(周玉刚)b), Zheng Shu-Wen(郑树文)a), Yin Yi-An(尹以安)a), Wu Le-Juan(仵乐娟) a), Wang Hai-Long(王海龙)a), and Yang Xiao-Dong(杨孝东)a)
摘要: InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).
中图分类号: (Light-emitting devices)