Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

doi:10.1088/1674-1056/25/2/028501

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/25/2/028501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友)

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2015-06-17 修回日期:2015-10-09 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: Hui-Qing Sun E-mail:sunhq@scnu.edu.cn
基金资助:
Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Major Scientific and Technological Projects of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province, China (Grant Nos. 2014B010121001 and 2014B010119004).

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友)

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Received:2015-06-17 Revised:2015-10-09 Online:2016-02-05 Published:2016-02-05
Contact: Hui-Qing Sun E-mail:sunhq@scnu.edu.cn
Supported by:
Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Major Scientific and Technological Projects of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province, China (Grant Nos. 2014B010121001 and 2014B010119004).

摘要/Abstract

摘要： The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

关键词: double electron blocking layers, ultraviolet light-emitting diodes, n-AlGaN, electrostatic field

Abstract: The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

Key words: double electron blocking layers, ultraviolet light-emitting diodes, n-AlGaN, electrostatic field

中图分类号: (Light-emitting devices)

85.60.Jb

78.60.Fi (Electroluminescence) 87.15.A- (Theory, modeling, and computer simulation) 73.61.Ey (III-V semiconductors)

张诚, 孙慧卿, 李旭娜, 孙浩, 范宣聪, 张柱定, 郭志友. Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers[J]. 中国物理B, 2016, 25(2): 28501-028501.

Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友). Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers[J]. Chin. Phys. B, 2016, 25(2): 28501-028501.

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Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

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