Blue InGaN light-emitting diodes with dip-shaped quantum wells

doi:10.1088/1674-1056/20/10/108504

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/20/10/108504

Blue InGaN light-emitting diodes with dip-shaped quantum wells

肖国伟¹, 周玉刚¹, 卢太平², 李述体², 张康², 刘超², 郑树文², 尹以安², 仵乐娟², 王海龙², 杨孝东²

(1)APT Electronics Ltd, Nansha District, Guangzhou 511458, China; (2)Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2011-04-06 修回日期:2011-05-31 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

Blue InGaN light-emitting diodes with dip-shaped quantum wells

Lu Tai-Ping(卢太平)^a), Li Shu-Ti(李述体)^a)†, Zhang Kang(张康)^a), Liu Chao(刘超)^a), Xiao Guo-Wei(肖国伟)^b), Zhou Yu-Gang(周玉刚)^b), Zheng Shu-Wen(郑树文)^a), Yin Yi-An(尹以安)^a), Wu Le-Juan(仵乐娟)^a), Wang Hai-Long(王海龙)^a), and Yang Xiao-Dong(杨孝东)^a)

^a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; ^b APT Electronics Ltd, Nansha District, Guangzhou 511458, China

Received:2011-04-06 Revised:2011-05-31 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

摘要/Abstract

摘要： InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

关键词: GaN-based light-emitting diodes, dip-shaped quantum wells

Abstract: InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

Key words: GaN-based light-emitting diodes, dip-shaped quantum wells

中图分类号: (Light-emitting devices)

85.60.Jb

87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)

卢太平, 李述体, 张康, 刘超, 肖国伟, 周玉刚, 郑树文, 尹以安, 仵乐娟, 王海龙, 杨孝东. Blue InGaN light-emitting diodes with dip-shaped quantum wells[J]. 中国物理B, 2011, 20(10): 108504-108504.

Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) . Blue InGaN light-emitting diodes with dip-shaped quantum wells[J]. Chin. Phys. B, 2011, 20(10): 108504-108504.

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Blue InGaN light-emitting diodes with dip-shaped quantum wells

Blue InGaN light-emitting diodes with dip-shaped quantum wells

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